Allicdata Part #: | S25FL129P0XBHIZ10-ND |
Manufacturer Part#: |
S25FL129P0XBHIZ10 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 128M SPI 104MHZ 24BGA |
More Detail: | FLASH - NOR Memory IC 128Mb (16M x 8) SPI - Quad I... |
DataSheet: | S25FL129P0XBHIZ10 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | FL-P |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 128Mb (16M x 8) |
Clock Frequency: | 104MHz |
Write Cycle Time - Word, Page: | 5µs, 3ms |
Memory Interface: | SPI - Quad I/O |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 24-TBGA |
Supplier Device Package: | 24-BGA (6x8) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
S25FL129P0XBHIZ10 is a type of non-volatile, serial flash memory. It is used for various memory applications, such as in System-on-Chip (SOC) implementations, embedded storage applications, BIOS storage, etc. It integrates the 3V Non Volatile Flash Core logic and quad charge-pump flash output stage.
In memory applications, S25FL129P0XBHIZ10 is suitable for many different applications such as code storage, parameter storage, application specific data storage and boot firmware storage. The main features of S25FL129P0XBHIZ10 include the following:
- Small form factor
- High-speed programming and erase
- High-speed data read
- Advanced wear levelling algorithms
- Security and hardware protection
- Compeltely integrated on-chip programming
- Programmable memory map
- Content addressable memory interface
The working principle of S25FL129P0XBHIZ10 is based on its internal circuitry. It is made up of address and control logic that controls the data flow to and from the memory. It is composed of an internal microcontroller and a number of memory cells. The memory cells are divided into two groups, one that stores the data and the other one that stores the control information.
The internal microcontroller is responsible for controlling the operations of the device. It receives commands from the system controller and executes the commands accordingly. The memory cells are connected to the microcontroller and the data is written and read from the memory cells. The internal circuitry also includes write and erase circuits that are responsible for writing and erasing data from the memory cells.
The main benefit of using the S25FL129P0XBHIZ10 is that it helps in increasing the storage capacity of the system. It offers a much higher density than other storage devices, making it ideal for applications that require high-density storage. It also provides better reliability and a higher performance compared to other memory devices. Additionally, it supports a variety of interface options, making it suitable for a wide range of applications.
Overall, S25FL129P0XBHIZ10 is an excellent choice for memory applications. It offers a superior level of data storage and retrieval performance, making it suitable for both small and large applications. Moreover, it is reliable and features a range of advanced features, making it ideal for many different kinds of applications.
The specific data is subject to PDF, and the above content is for reference
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