S25FL129P0XBHV210 Allicdata Electronics
Allicdata Part #:

S25FL129P0XBHV210-ND

Manufacturer Part#:

S25FL129P0XBHV210

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 128M SPI 104MHZ 24BGA
More Detail: FLASH - NOR Memory IC 128Mb (16M x 8) SPI - Quad I...
DataSheet: S25FL129P0XBHV210 datasheetS25FL129P0XBHV210 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: FL-P
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (8x6)
Description

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Many applications require flash memory that offers a wide capacity range, excellent performance, and reliability. S25FL129P0XBHV210 is a product within the latest flash memory family developed by Spansion. This type of flash memory can be found in a range of different applications and devices, such as digital camera, tablet, cell phone, digital music players, and microcontroller. This article explores the applications and working principle of S25FL129P0XBHV210 in memory applications.

Features of S25FL129P0XBHV210

S25FL129P0XBHV210 is an advanced flash memory that offers an industry-leading combination of density, performance, and reliability. It is designed to address the needs of the most demanding applications such as cellular handsets, digital cameras, and PDAs. It offers excellent storage density and throughput rates, with a storage capacity ranging from 1 to 128 megabytes, and a maximum read/write speed of up to 18 megabits per second. In addition, the memory is designed with advanced features such as error correction for reliable data integrity, low power consumption for longer battery life and built-in surface mount technology for greater board-level integration.

S25FL129P0XBHV210 is a highly efficient, long-lasting and reliable memory chip. It is designed to meet the toughest requirements of mobile applications in the modern world. It consumes very low power and offers good performance in terms of read/write speed. It also features a range of protect features to help protect data from damage. Furthermore, this chip is designed to be compatible with many different operating systems, making it easy to integrate into a wide range of devices.

Applications of S25FL129P0XBHV210

As mentioned previously, S25FL129P0XBHV210 is a flexible and highly efficient chip that can be used in a wide range of applications. It is used primarily in the consumer electronics industry to store data such as data in digital cameras and mobile phones. In addition, it can be used in other electronics such as automotive, computing, and industrial. Some of the most common applications include:

  • Digital Cameras: The S25FL129P0XBHV210 can be used in digital cameras to store and read images. It offers excellent performance and data integrity, making it an ideal choice for digital cameras.
  • Data Storage: This type of flash memory can be used to store data in microcontrollers and embedded systems. It is an ideal choice for those requiring reliable and efficient data storage.
  • Industrial Control: The S25FL129P0XBHV210 can be used in industrial control applications due to its high-efficiency and reliable data storage. It can be used in a wide range of industrial control applications, such as automotive, aerospace, medical, and military.

S25FL129P0XBHV210 is a versatile and reliable flash memory that is suitable for a wide range of applications. It offers a high-level of density, performance and data integrity, making it an ideal choice for storing data in embedded systems and digital cameras.

Working Principle of S25FL129P0XBHV210

S25FL129P0XBHV210 is a type of nonvolatile memory that uses a floating gate transistor in order to store data. It is commonly accessed by programming and reading it back with the use of transistors. The transistors are typically located on the edge of the memory chip, and they are used to select a cell and transfer data in that cell.

The transistors used in S25FL129P0XBHV210 are programmed by passing current through a cell, which will increase the voltage on the floating gate and program it with data. This data on the floating gate can be read by passing voltage through the cell and measuring the levels of the current. This read operation is a controllable process and is known as “reading” or “erasing” the cell.

The data stored in the S25FL129P0XBHV210 memory cell can be changed by either erasing the data or programming it with new data. Erasing the data can be done by increasing the voltage on the floating gate, which will cause the electrons to be expelled from the cell. This process is known as a “reset”, and it will cause the cell to be set back to its original state.

Once the data is erased, it can be programmed again by passing current through the cell in order to store new data. This is known as a “program”, and it will cause the electrons to become trapped in the cell, creating a digital “1”. This can be done by controlling the current and voltage levels on the floating gate.

Conclusion

S25FL129P0XBHV210 is a versatile and reliable flash memory that is suitable for a wide range of applications. It is designed to offer a high-level of density, performance and data integrity, making it an ideal choice for storing data in embedded systems and digital cameras. It uses a floating gate transistor to store data, which is accessed by programming and reading it back with the use of transistors. Furthermore, the data stored in the S25FL129P0XBHV210 memory cell can be changed by either erasing the data or programming it with new data.

The specific data is subject to PDF, and the above content is for reference

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