Allicdata Part #: | S25FL129P0XBHV310-ND |
Manufacturer Part#: |
S25FL129P0XBHV310 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 128M SPI 104MHZ 24BGA |
More Detail: | FLASH - NOR Memory IC 128Mb (16M x 8) SPI - Quad I... |
DataSheet: | S25FL129P0XBHV310 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | FL-P |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 128Mb (16M x 8) |
Clock Frequency: | 104MHz |
Write Cycle Time - Word, Page: | 5µs, 3ms |
Memory Interface: | SPI - Quad I/O |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 105°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 24-TBGA |
Supplier Device Package: | 24-BGA (6x8) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The S25FL129P0XBHV310 is a multifunctional, high-performance embedded M-Series Flash Memory, providing a wide array of features for a variety of applications. This innovative product offers a flexible, cost-effective solution for mobile, internet of things, connected industrial, and automotive embedded applications.
The S25FL129P0XBHV310 features a high-speed interface and industry-leading read performance up to 10-14Mt/s, with a maximum write speed of 8-12Mt/s. This high performance allows users to store large amounts of data quickly, and importantly, easily in one reliable place. The enhanced endurance offers up to 5,000 program/erase (PE) cycles, making it suitable for more challenging applications that require continued use with minimal performance degradation.
In addition, the device\'s small form factor makes it perfect for use in cramped spaces. The standard 1.8V turn-on/turn-off voltage range minimizes current consumption during standby, allowing the device to support a broad range of applications. Additionally, S25FL129P0XBHV310 memory offers tight endurance control and provides maximum performance downstream.
The working principle of the S25FL129P0XBHV310 is based on the principles of non-volatile memory in which data is stored in cells that are addressable and rewritten. The physical memory cells are typically composed of two layers of insulation material and two layers of floating gate (FG) transistors that store the data as electrons. To access the data, the cells are addressed and the data is read from the appropriate memory cells.
When the power is turned off, the floating gate cells maintain their charge and the data remains stored. This makes them ideal for applications requiring long term data storage or persistence. In addition, the S25FL129P0XBHV310 provides wear-leveling and corrective action / error controls that are designed to protect the device’s memory cells and data integrity, allowing the device to survive more challenging applications.
The S25FL129P0XBHV310 is an ideal memory solution for embedded applications that require high speed data access, improved endurance, and reliability. It offers an extensive feature set and is designed to deliver superior performance, reliability, and efficiency in a flexible, cost-effective, and customizable package. The device is designed to be reliable and is well suited for applications that require long-term data storage, such as industrial automation, mobile, and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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