Allicdata Part #: | S25FL129P0XNFI000M-ND |
Manufacturer Part#: |
S25FL129P0XNFI000M |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC MEMORY FLASH NOR |
More Detail: | Memory IC |
DataSheet: | S25FL129P0XNFI000M Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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S25FL129P0XNFI000M is a common type of memory used in electronics and computer engineering applications. This type of memory is often referred to as an electrically erasable programmable read-only memory (EEPROM) and is used to store important program data. The S25FL129P0XNFI000M is a particular type of flash memory which has a particular application field and working principle.
Application Field of S25FL129P0XNFI000M Flash Memory
The S25FL129P0XNFI000M flash memory is a type of non-volatile memory which means it can retain data when power is not applied to the device. This makes it an ideal choice for applications which require long data retention with minimal power usage. The S25FL129P0XNFI000M is commonly used in robotics applications as well as industrial grade production lines which require reliable and repeatable data. The S25FL129P0XNFI000M flash memory is also used for automotive applications, data acquisition systems, gaming consoles, medical devices, and mobile device applications.
Working Principle of S25FL129P0XNFI000M Flash Memory
The S25FL129P0XNFI000M flash memory is based on a technology called flash EEPROM. This technology uses a combination of electrons and a floating gate to store charge. The charge is held in the floating gate, which is insulated by tunnel oxide and a control gate. The control gate contains a set of transistors, which allows the charge to flow between the control gate and the floating gate. The electrons are used to change the resistance of the floating gate, allowing data to be stored.
To read data from the flash memory, the control gate is used to select the correct address from where the data is stored. The data stored in the as address is then read and returned to the user. To write data to the memory, the same procedure is followed. However, electrons are sent to the floating gate to change its resistance. As the resistance of the floating gate is changed, the charge stored in the floating gate is changed and data can be written to the memory. Once the data is written, the new data is then stored in the memory and can be retrieved when needed.
The S25FL129P0XNFI000M flash memory is a very popular choice for applications requiring reliable and repeatable data. It is popular because it is fast, reliable, and requires minimal power to store data. The S25FL129P0XNFI000M is also very easy to use, making it an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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