S25FL129P0XNFV013

Series:	FL-P
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	128Mb (16M x 8)
Clock Frequency:	104MHz
Write Cycle Time - Word, Page:	5µs, 3ms
Memory Interface:	SPI - Quad I/O
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 105°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-WDFN Exposed Pad
Supplier Device Package:	8-WSON (6x8)

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Application Field of S25FL129P0XNFV013

The S25FL129P0XNFV013, a floating-gate NOR Flash memory from Cypress Semiconductor, is widely used in today’s embedded system designs. It offers high-density storage, high-speed operation, low power consumption, and low voltage operation. The S25FL129P0XNFV013 is ideal for a wide range of applications such as data storage, code storage, non-volatile data storage, parameter storage, encryption code storage, encryption key storage, system register storage, and more. It is also used in industrial, consumer, automotive, communications, and telecommunications applications.

Working Principle of S25FL129P0XNFV013

The S25FL129P0XNFV013 utilizes a floating-gate NOR Flash memory cell structure, which allows the device to store and retrieve data quickly. This structure couples a memory cell to a floating-gate transistor, which allows the cell to be programmed with multiple bits of binary information. The bit information is then written to or read from the memory cell during read and write operations, respectively.The S25FL129P0XNFV013 device is based on a Multi-Level Cell (MLC) NAND Flash technology, which allows the device to store multiple bits of binary information. This is done by programming one of two available levels on a memory cell. An ON level is programmed with a low voltage and an OFF level is programmed with a higher voltage. By controlling the voltage applied to a floating-gate transistor, different levels of information can be written to and read from the memory cell.The device is also capable of performing erase and write operations on single bits. This is done through a special erase and write command, called “Write 1 to bit”. Through this command, the device can write a new level of binary information to a previously written bit, without erasing the existing bit.The S25FL129P0XNFV013 also offers security features such as secure erase, secure startup, and secure read. These features allow the device to protect data from unauthorized access. They also allow the device to erase data without leaving any traceable data in the memory device.The S25FL129P0XNFV013 is a high-performance floating-gate NOR Flash memory device, which offers a wide range of applications in embedded system designs. It is capable of storing and retrieving data quickly, and offers a range of security features to protect the data stored in the memory device.

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