S25FL132K0XBHIS20

Series:	FL1-K
Packaging:	Tray
Part Status:	Last Time Buy
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	32Mb (4M x 8)
Clock Frequency:	108MHz
Write Cycle Time - Word, Page:	3ms
Memory Interface:	SPI - Quad I/O
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	24-TBGA
Supplier Device Package:	24-BGA (8x6)

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Memory is a term used to collective refer to various types of data storage devices. It encompasses computer hardware that is capable of retaining digital information briefly or permanently. Memory devices may include random-access memory (RAM), read-only memory (ROM), and flash memory.S25FL132K0XBHIS20 is a typical type of flash memory produced by Cypress Semiconductor. This device acts as both a read-only memory (ROM) and a programmable read-only memory (PROM), offering high-speed and low-power operation.The S25FL132K0XBHIS20 is a high density, low-power, serial non-volatile flash memory device that manufactures and stores information in a three-dimensional stack cell array. It consists of four internally die with a power source of up to 3.6V.S25FL132K0XBHIS20 has various application fields, including smart phones, tablet PCs, car information systems, and industrial applications. It is widely used in industrial applications such as medical devices, wearables, and industrial displays due to its features of high speed, low power, and reliability. In addition, S25FL132K0XBHIS20 includes a temperature range of -40°C to +85°C and also features a built-in erase/write protect command.The working principle of S25FL132K0XBHIS20 is similar to other types of flash memories, such as NOR and NAND flash memories. S25FL132K0XBHIS20 contains tiny transistors to store information. It is characterized by the fact that it can be erased and reprogrammed multiple times. The device is capable of storing up to 16 Mb (megabits) of information and can achieve speeds of up to 40 MHz.S25FL132K0XBHIS20 also uses a Page Mode technique to read or write multiple bytes of data. The Page Mode technique involves the reading and writing of multiple bytes of data with only one command cycle. This allows for faster data transfer, as well as smaller bus sizes to be used, which makes it well suited for low-power designs.The S25FL132K0XBHIS20 also includes a built-in write protection command. This write protection command disables the write and program operations, making the device more secure. The S25FL132K0XBHIS20 also includes a range of erase commands, allowing users to selectively erase specific sectors of the device.In addition, the S25FL132K0XBHIS20 supports a range of other features. These features include security commands such as Access/Block Lock, Program/Erase Suspend, and program/erase suspend/halts. It also supports cyclic redunancy check (CRC) and cyclic redunancy check error correction code (ECC).Overall, the S25FL132K0XBHIS20 is a high density, low-power, serial non-volatile flash memory device. It is designed for applications in smart phones, tablet PCs, car information systems, and industrial applications. It offers users high speed, low power, and excellent reliability. It supports various features such as a write protection command and a range of erase commands.

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