S25FL132K0XBHIS30 Allicdata Electronics
Allicdata Part #:

S25FL132K0XBHIS30-ND

Manufacturer Part#:

S25FL132K0XBHIS30

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 32M SPI 108MHZ 24BGA
More Detail: FLASH - NOR Memory IC 32Mb (4M x 8) SPI - Quad I/O...
DataSheet: S25FL132K0XBHIS30 datasheetS25FL132K0XBHIS30 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: FL1-K
Packaging: Tray 
Part Status: Last Time Buy
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8)
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (6x8)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The S25FL132K0XBHIS30 is a memory, specifically a 2.3v NAND Flash Memory based on Spansion\'s second generation SuperSLC NAND flash technology. It offers features such as a high level of performance, durability, and power efficiency. This memory is used in a variety of applications, including consumer electronics, automotive, medical, industrial, and military. It is also suitable for applications such as data logging, gaming, enterprise storage, routers, and embedded systems. The S25FL132K0XBHIS30 is available in a variety of packages, allowing for easy integration into a wide range of applications.

The S25FL132K0XBHIS30 offers a fast read and write performance of up to 16MB/s, allowing for quick access to data. It also features advanced error correcting code (ECC) technology, which enables higher data integrity and reliability even in cases of corruption. This memory also features intelligent wear leveling algorithms, which ensures that blocks are not overwritten too quickly, allowing for a longer life. Additionally, the S25FL132K0XBHIS30 has an internal power monitor, which allows for constant monitoring of the memory and helps to ensure that it remains in optimal operating conditions.

The working principle of the S25FL132K0XBHIS30 is similar to other NAND flash memories. It uses a gate oxide layer to store electrical charge on a floating gate, which is then used to maintain the memory’s state even after power has been removed. To read or write data, the memory uses the charge on the floating gate to create a change in electrical current, which is then read and interpreted by a computer or microcontroller.

The S25FL132K0XBHIS30 is an ideal memory for a variety of applications due to its fast read and write speeds, advanced ECC technology, intelligent wear leveling algorithms, and internal power monitor. It is an ideal choice for high-performance applications that require a reliable, long-lasting memory solution.

The specific data is subject to PDF, and the above content is for reference

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