
Allicdata Part #: | S25FL132K0XBHIS30-ND |
Manufacturer Part#: |
S25FL132K0XBHIS30 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 32M SPI 108MHZ 24BGA |
More Detail: | FLASH - NOR Memory IC 32Mb (4M x 8) SPI - Quad I/O... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | FL1-K |
Packaging: | Tray |
Part Status: | Last Time Buy |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 32Mb (4M x 8) |
Clock Frequency: | 108MHz |
Write Cycle Time - Word, Page: | 3ms |
Memory Interface: | SPI - Quad I/O |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 24-TBGA |
Supplier Device Package: | 24-BGA (6x8) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The S25FL132K0XBHIS30 is a memory, specifically a 2.3v NAND Flash Memory based on Spansion\'s second generation SuperSLC NAND flash technology. It offers features such as a high level of performance, durability, and power efficiency. This memory is used in a variety of applications, including consumer electronics, automotive, medical, industrial, and military. It is also suitable for applications such as data logging, gaming, enterprise storage, routers, and embedded systems. The S25FL132K0XBHIS30 is available in a variety of packages, allowing for easy integration into a wide range of applications.
The S25FL132K0XBHIS30 offers a fast read and write performance of up to 16MB/s, allowing for quick access to data. It also features advanced error correcting code (ECC) technology, which enables higher data integrity and reliability even in cases of corruption. This memory also features intelligent wear leveling algorithms, which ensures that blocks are not overwritten too quickly, allowing for a longer life. Additionally, the S25FL132K0XBHIS30 has an internal power monitor, which allows for constant monitoring of the memory and helps to ensure that it remains in optimal operating conditions.
The working principle of the S25FL132K0XBHIS30 is similar to other NAND flash memories. It uses a gate oxide layer to store electrical charge on a floating gate, which is then used to maintain the memory’s state even after power has been removed. To read or write data, the memory uses the charge on the floating gate to create a change in electrical current, which is then read and interpreted by a computer or microcontroller.
The S25FL132K0XBHIS30 is an ideal memory for a variety of applications due to its fast read and write speeds, advanced ECC technology, intelligent wear leveling algorithms, and internal power monitor. It is an ideal choice for high-performance applications that require a reliable, long-lasting memory solution.
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