S25FL132K0XBHVS20

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is an essential element of every computing device. It is used in everything from smartphones to desktops, and in all types of applications. One type of memory, which is gaining popularity, is known as Flash memory. This type of memory has faster retrieval times than traditional memory and is more reliable than other types of memory. S25FL132K0XBHVS20 is one type of Flash memory.

The S25FL132K0XBHVS20 is a 3V low-power, single-level cell NAND Flash memory that is designed for use in embedded systems. This type of memory offers higher storage and retrieval performance in a smaller form factor than traditional memory. It is available in capacities of 1Gb (128M bits) and 2Gb (256M bits) and features a sector erase architectural design that offers high reliability and scalability for a broad range of interface applications.

The S25FL132K0XBHVS20 offers an extremely low operating power consumption, typical of 3V NAND Flash memory. This helps to reduce power consumption and prolong battery life. It also features advanced security encryption, including 64/128/256-bit Advanced Encryption Standard, which provides protection against unauthorized access. The memory also includes error correction code (ECC), which helps to ensure data integrity and accuracy.

The S25FL132K0XBHVS20 is suitable for use in a variety of computing applications, including industrial automation and control, automotive, consumer electronics, embedded multimedia and multi-function applications. The memory’s accelerated access speed and low power consumption make it an ideal choice for applications that require fast response times.

The S25FL132K0XBHVS20 works on the principles of flash memory, known as NAND (Negated AND) Flash. This type of Flash memory consists of a number of NAND gates arranged in a series. When the power is switched on the gates are opened, allowing a data pulse to pass. When the power is turned off the gate will remain closed, preventing a new data pulse from passing.

The NAND Flash memory’s read/write cycle is controlled by a state machine. This state machine is responsible for verifying the data as it is written and read. When the memory is not being used, it is in an idle state. The data is written to the memory cell in a separate state, which is called the write state. The read state is when the data is read from the memory.

The S25FL132K0XBHVS20 is designed for chip-to-chip and system-on-chip applications which require low program and erase times. The memory is capable of supporting programming up to 10 times faster than traditional NAND Flash memory and data erasing and programming at high speeds. The memory also offers a wide range of advanced features, such as low power consumption, advanced security and error correction code.

The S25FL132K0XBHVS20 Flash memory is an ideal solution for a wide range of embedded applications that require lightning fast access times and low energy consumption. The advanced security and error correction code make it an excellent choice for applications that require data protection and accuracy. This type of Flash memory is quickly becoming the standard in embedded computing.

The specific data is subject to PDF, and the above content is for reference