S25FL164K0XBHIS20

Series:	FL1-K
Packaging:	Tray
Part Status:	Last Time Buy
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	64Mb (8M x 8)
Clock Frequency:	108MHz
Write Cycle Time - Word, Page:	3ms
Memory Interface:	SPI - Quad I/O
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	24-TBGA
Supplier Device Package:	24-BGA (8x6)

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Memory is one of the most important components of computers and other electronic devices, and for this reason, there has been a huge demand for increasingly higher storage density and performance, from applications ranging from consumer electronics to industrial and automotive applications.The S25FL164K0XBHIS20 is a high performance non-volatile NOR Flash Memory which offers the highest storage densities for the smallest sized packages. It has been designed for a broad range of applications, including automotive, industrial and consumer.The S25FL164K0XBHIS20 utilizes a two-transistor cell architecture that is optimized for high performance and low power consumption, as well as offering extremely fast erase and write times. The chip features an extended endurance and data retention time, up to 100 years and 25 years respectively. The S25FL164K0XBHIS20 also provides a wide operating temperature range of -40°C to +125°C.The S25FL164K0XBHIS20 is ideal for a variety of applications, ranging from low latency and random access applications, such as real-time functions in automotive systems to heavy write intensive applications, such as flash file systems. It can also be used as a non-volatile memory for a wide array of embedded applications, such as embedded systems and smart energy/sensor solutions.Working principle of S25FL164K0XBHIS20The S25FL164K0XBHIS20 utilizes a two-transistor cell architecture that ensures high reliability and performance. The two-transistor cell architecture is a combination of a classic NOR-type cell combined with a write-data latch. This provides for fast random access read speeds and offers quieter power consumption.When writing data to the S25FL164K0XBHIS20, the two-transistor architecture requires two separate operations. First, the data is written to the write-data latch and then it is transferred to the memory cell. This facilitates fast programming times of up to 25 µs page writes and 5 µs word writes.The S25FL164K0XBHIS20 also features a broad range of protection features, including write protect, ECC error correction and write protection. This ensures the protection of data stored in the device and provides high levels of data integrity.The S25FL164K0XBHIS20 utilizes an advanced memory management architecture which allows for efficient use of the memory as well as improved programming operations. The device provides a number of parameters, including pages, blocks, erasable blocks and sectors, which allow for precise control over the way data is stored in the device.To ensure optimal performance of the S25FL164K0XBHIS20, a number of best practices must be followed. This includes programming algorithms that take into account the number of pages per block and the number of blocks per sector. Furthermore, the ECC protection should be enabled for all programming operations, to provide for increased data integrity.The S25FL164K0XBHIS20 is a reliable and high performance NOR Flash Memory solution and is suitable for an array of application fields, including automotive, industrial and consumer use. The high storage density, extended endurance and data retention times, as well as the optimized two-transistor cell architecture, make the S25FL164K0XBHIS20 an ideal choice for flash-based applications.

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