S25FL164K0XBHVS33 Allicdata Electronics
Allicdata Part #:

S25FL164K0XBHVS33-ND

Manufacturer Part#:

S25FL164K0XBHVS33

Price: $ 0.68
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH NOR 24FBGA
More Detail: FLASH - NOR Memory IC 64Mb (8M x 8) SPI - Quad I/O...
DataSheet: S25FL164K0XBHVS33 datasheetS25FL164K0XBHVS33 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.61913
Stock 1000Can Ship Immediately
$ 0.68
Specifications
Series: FL1-K
Part Status: Last Time Buy
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Description

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Memory device is a kind of essential skill in many different applications nowadays due to its ability to remember information even when power is turned off. The S25FL164K0XBHVS33 is a new level of memory device due to its small size, high speed, and low power operation. The 8-pin SOIC (small outline integrated circuit) package that houses the S25FL164K0XMVS33 memory device allows it to be used in very small spaces like mobile phones, robots, and other advanced platforms.

The S25FL164K0XBHVS33 is a non-volatile serial SRAM that is designed for a wide range of applications. The memory device is available in both 64Kbit and 128Kbit densities and comes in several configurations. The S25FL164K0XBHVS33 can be set up as either a 4- or 8-bit wide device, allowing it to be used in either 8- or 16-bit systems. The package can also be used as a serial peripheral interface that is capable of operating in the low-frequency range of 0-50 MHz.

The S25FL164K0XBHVS33 memory device is employed in a variety of applications due to its robustness and speed. It can be used as an on-die implementation or as an off-die version. It is often used in mobile phone memory, solid state drives, and embedded systems. It can also be used in memory expansion, automotive applications, and robotics. As such, the S25FL164K0XBHVS33 can be used in various applications where reliability, speed, and energy efficiency are key.

The S25FL164K0XBHVS33 employs a split architecture which uses an SRAM and an external memory interface device in order to achieve a high speed and reliable data storage. It also uses a combination of an R/C filter, an embedded self-timed read/write protocol, and an auto-refresh command to ensure data integrity is maintained. Furthermore, the memory device employs a digital write protect pin to facilitate safe data storage.

The working principle of the S25FL164K0XBHVS33 is as follows: when a write command is sent, the data is stored in the SRAM. The external memory interface device then checks the write command before transferring the data to the permanent data storage. Similarly, when a read command is sent, the external memory interface device retrieves the requested data from the SRAM. The internal registers that hold the write protect and self-timed read/write protocols help maintain data integrity.

The S25FL164K0XBHVS33 memory device is a unique device due to its ability to offer a high level of performance, reliability, and low power operation in a very small form factor. It is capable of being used in a wide range of applications due to its flexibility and split architecture. Its working principle makes use of an SRAM and an external memory interface device to ensure data is stored reliably. The combination of features found in the S25FL164K0XBHVS33 memory device make it suitable for use in many applications that call for high speed, low power, and reliable data storage.

The specific data is subject to PDF, and the above content is for reference

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