S25FL204K0TMFI040

Series:	FL2-K
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	4Mb (512K x 8)
Clock Frequency:	85MHz
Write Cycle Time - Word, Page:	5ms
Memory Interface:	SPI
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

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Introduction to S25FL204K0TMFI040 Memory

The S25FL204K0TMFI040 is a type of memory specifically designed for use in a wide variety of applications. It is an embedded NAND Flash memory device, and has a total capacity of up to 4GB. This makes it suitable for a wide range of applications, which need to store data or program information with a high degree of accuracy and reliability. It is a cost-effective alternative to larger and more expensive memory solutions, and provides great performance for many applications.

Applications of S25FL204K0TMFI040 Memory

The S25FL204K0TMFI040 memory is particularly suited for industrial applications such as medical electronics, automotive miscellaneous apps, consumer electronics, and energy-saving technologies. Its outstanding reliability makes it an ideal fit for such applications because it is not easily damaged and can retain information even after power outages or other unexpected occurrences. It is also well-suited for consumer applications like smartphones, tablets and digital cameras which require large amounts of data storage. The S25FL204K0TMFI040 has the capacity to store up to 4GB of information, which is enough for the typical consumer application. Additionally, the memory device is small enough to fit into limited spaces, making it an ideal choice for the modern consumer application.

Advantage of Using S25FL204K0TMFI040 Memory

The S25FL204K0TMFI040 is extremely reliable and cost-effective, making it a great choice for a variety of applications. Furthermore, it is suitable for both consumer and industrial applications. The S25FL204K0TMFI040 memory has the following advantages compared to other types of memory. Firstly, it is incredibly fast, with a read/write speed of up to 50MB/s. Secondly, it is very small and lightweight, making it suitable for a wide range of embedded applications. Thirdly, the memory is highly reliable, with a guaranteed lifespan of up to 10000 write/erase cycles. Finally, the device is highly energy-efficient, making it a great choice for long-term data storage applications.

Working Principle of S25FL204K0TMFI040 Memory

The S25FL204K0TMFI040 memory utilizes NAND technology to store data. It is made up of an array of floating gate transistors, which are connected to each other by a number of channels. Each transistor can store one bit of information, and the whole array is connected to an address decoding circuit.When the device is powered on, the address decoding circuit identifies the location of the desired transistor, and then activates the correct channel to access the desired information. Data is written to the device by applying a voltage to activate the desired transistor and setting a “1” or “0” bit. The data is then retained in memory until it is erased. The device can also retrieve data by reversing the writing process. The address decoding circuit is used to identify the correct transistor, and then the correct channel is activated to access the desired data.

Conclusion

The S25FL204K0TMFI040 is a very reliable and cost-effective memory solution for a wide range of applications. It is particularly suited for industrial and consumer applications, thanks to its low power consumption, fast data access, and long-term reliability. It utilizes NAND technology to store data, and its address decoding circuit allows for easy data retrieval and writing. The device is very small and lightweight, making it suitable for embedded applications. Overall, the S25FL204K0TMFI040 memory is a great choice for various applications that need reliable and cost-effective data storage solutions.

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