Allicdata Part #: | 1274-1088-ND |
Manufacturer Part#: |
S25FL204K0TMFI041 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 4M SPI 85MHZ 8SO |
More Detail: | FLASH - NOR Memory IC 4Mb (512K x 8) SPI 85MHz 8-... |
DataSheet: | S25FL204K0TMFI041 Datasheet/PDF |
Quantity: | 1000 |
Series: | FL2-K |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 4Mb (512K x 8) |
Clock Frequency: | 85MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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S25FL204K0TMFI041 is a type of memory, and this article will delve into its application field and working principle. The S25FL204K0TMFI041 is a member of the S25FLxxK0 series of flash memoriles produced by Cypress Semiconductor Corp. Cypress was first founded in 1982 and has been supplying the electronics industry with memory chips for the past thirty years. Check out our guide to memory manufacturers to learn more about them.
The S25FL204K0TMFI041 device is suitable in a wide variety of applications, including industrial grade embedded systems, handheld devices, consumer electronics and automotive applications. This particular model is a 3.3V device with a 4KB page size suitable for a wide range of code and data storage applications. It also features a reduced power sleep mode, making it a great choice for portable devices. It has an extensive temperature range of -40 to +85 degrees Celsius and is tastefully packaged in an 8-pin SOIC package.
The working principle of the S25FL204K0TMFI041 memory is based on the principle of immobilizing charge on the surface of an insulated floating gate. This is where the surface insulation prevents any electrons from leaving the gate and allows the trapped electrons during write operations to remain on the gate during read operations. To write information the S25FL204K0TMFI041 memory it is necessary to supply high voltage on the memory cells. It allows electrons to tunnel into the floating gate due to the presence of an electric field produced by the high voltage. The write operations on this chip is generally done by supplying high voltage on the control gates.
The S25FL204K0TMFI041 also features some useful additional features, such as built-in self-tests and built-in ECC (error-correcting code). This ensures the data stored in the memory is accurate, reliable and secure. The chip also has a weather-resistant coating, allowing it to function in a wide variety of climates. Finally, the chip also has an extended endurance of 1000 program/erase cycles to make it reliable for many years.
From the industrial grade embedded systems to consumer electronics, the S25FL204K0TMFI041 is a very versatile memory chip that is suitable for a variety of applications. The working principle of this chip is based on the immobilization of charges on the surface of an insulated floating gate, which allows the electron tunneling current to flow during the write operations. The chip also features additional features such as self-tests, ECC, a weather-resistant coating and an extended endurance of up to 1000 P/E cycles. All of these features make the S25FL204K0TMFI041 an excellent memory chip for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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