S25FL204K0TMFI043 Integrated Circuits (ICs)

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The S25FL204K0TMFI043 is a non-volatile memory device. It is a two-terminal integrated circuit (IC) composed of a 4Kbyte array of electrically programmable and electrically erasable non-volatile flash memory cells. This type of memory is ideal for low-power, cost-sensitive applications. Its small size, low power consumption and wide temperature range makes it perfect for a range of applications in automotive, medical, industrial, and consumer products.

The flash memory consists of five layers of N-type and P-type transistors, also known as MOSFETs (Metal–Oxide–Semiconductor Field-Effect Transistors). The transistors are placed together in order to form four separate logic levels. The logic levels are the Foundry Row (FR), Sub-Array (SA), Marker (MR) and Backplane (BP) levels. The chip also contains a set of data registers and a 16-bit Accumulator.

Each layer of transistors is connected to a pair of bridges which are used to hold a data bit for the memory device. The bridges are made up of P and N devices and form a p–n junction. When this junction is opened, the data bit is electrically programmed into the memory. To erase the data at a specific memory location, the junction is reversed and the data bit is erased. The S25FL204K0TMFI043 operates with a write/erase cycle time of 10μs.

The S25FL204K0TMFI043 is suitable for a broad range of applications that include data logging, data storage, and nonvolatile memory solutions. Some of the applications where this device is used are serial EEPROM, embedded system code and data storage, nonvolatile configuration registers, HVAC service data logs, automotive electrical systems, and industrial automation.

It is important to note that the S25FL204K0TMFI043 is designed with a secure erase feature which prevents data stored in the memory array from being stored or changed unintentionally. It also features a self-protect mode that prevents programming and erasing of the memory array while it is current under program or erase operation. This ensures that the device remains secure from unauthorized access.

In conclusion, the S25FL204K0TMFI043 application field and working principle are ideal for a variety of memory solutions. The use of N-type and P-type transistors to form four separate logic levels, secure erase feature and self-protect mode ensure that the device is well suited for applications in automotive, medical, industrial, and consumer products.

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