S25FL256SAGBHIA03

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

S25FL256SAGBHIA03 Application Field and Working Principle

The S25FL256SAGBHIA03 is a type of memory device that can be used in a variety of applications and systems. It is a Non-Volatile Memory (NVM) device, meaning it can hold its data even when power is turned off. The device is organized into 256 pages of 256 bytes each, meaning that up to 65,536 bytes can be stored. It also holds an array of 4K blocks (4,096 bytes each). Furthermore, it provides a serial interface for high-speed communications between a system or processor and the NVM.

The S25FL256SAGBHIA03 is designed for a number of applications, such as embedded systems and other embedded products. Its features, such as its 8-bit bus width, make it a good choice for embedded systems that need large amounts of non-volatile memory. Additionally, the NVM device includes an integrated error detection and correction code (ECC), which enables it to detect and correct data errors. This means that the device can be used in missions where data accuracy is crucial.

The device’s working principle is to store data using semiconductor technology. A memory cell is made up of a control gate and an underlying floating gate device (FEG). The control gate can be either of two types: a SILO (Single-Level Inverter with 1-bit memory) or a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The SILO type has a single floating gate, while the MOSFET type has two floating gates. When a voltage is applied to the control gate, electrons from the channel can be attracted onto the floating gates, which are insulated from the control gate—this is called programming.

Once data is stored in the cell, it remains there until it is erased or overwritten. Erasing is done by applying a high voltage to the cell for a certain amount of time. The electrons on the floating gate are then released back to the channel and the cell is reset. This can be done in one of two ways: either with a standard erase instruction (SE) or with a block erase instruction (BE), which erases all memory in a particular sector. The device includes four instruction bytes (Program, Read, Erase, and Reset) that can be used to control the NVM device.

The S25FL256SAGBHIA03 is a reliable and versatile device that can be used in a number of applications. Its ability to store data without requiring a power source makes it ideal for embedded systems. Its built-in ECC feature ensures data accuracy and its four instruction bytes allow for a wide range of operations to be performed. It has a variety of features and capabilities that make it an excellent choice for those who need non-volatile memory.

The specific data is subject to PDF, and the above content is for reference