S25FL256SAGBHIC03

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S25FL256SAGBHIC03 is a type of semiconductor memory device developed by Toshiba Corporation. It is an ideal choice for industrial memory applications, offering reliability and superior performance for storing critical data.

S25FL256SAGBHIC03 is a Flash Memory device with energy-efficiency, which is powered by a single 5V power supply. Comparing to conventional 4Kbytes or 8Kbytes Serial NOR Flash, S25FL256SAx offers superior performance with enhanced pin compatible options plus internal ECC. It also provides higher capacity up to 256Mbits. In addition, the device offers a 0.1 second typical write time, reducing system latency and providing faster system operation.

S25FL256SAGBHIC03 employs a two-plane architecture that enables two independent operations at each half of the device simultaneously. It also has advanced features including multiple I/O speeds, features that enable the function of the Flash memory device in low voltage environments, and advanced protection features.

The S25FL256SAGBHIC03 device offers a variety of features, including a full status register, PRECOMP to reduce the write time, and CACHE programming that enable two successive program operations. It also supports block erase, which allows the entire memory device to be erased in a single command. The device also features low power consumption, offering an active power consumption of 2.8 mW and a standby power consumption of 270µW.

S25FL256SAGBHIC03 is used in a wide range of industrial applications due to its high-reliability and performance, including industrial robots, cellular telephones, medical equipment, and automotive applications. It is also used in large data storage systems, as well as automotive infotainment and telematics systems. It is available in various packages such as DIP, LGA, and QCC. due to its high-reliability and performance.

The working principle of S25FL256SAGBHIC03 is similar to other Flash memories. It consists of two main components: a flash memory array and a controller. The controller is responsible for managing the data flow between the memory array and the host. The memory array is responsible for storing and retrieving data. The structure of the memory array is composed of a Flash Cell, a Page, and a Block.

The memory array of S25FL256SAGBHIC03 is composed of 256Mbits. The page size is 512 bytes and the block size is 64K. Data is read from the Flash array using a command, which contains the address of the desired information. This data is then stored in temporary buffers in the controller for further processing. The read time for data from the memory array to the buffer is typically 0.1us.

When data is written to the Flash memory array, the write command contains the address at which the data is to be stored. This data is then written to the memory array in blocks. The write process of the memory array takes a certain period of time and can be reduced by the use of precompensation. The write time is typically 0.1 us for every data word stored.

The S25FL256SAGBHIC03 Flash memory device is also equipped with various protection features such as read, write and block erase protection that protect the data from unauthorized access. It also features an onboard ECC (Error Correction Code) to detect and correct data errors in the memory array. All these features make S25FL256SAGBHIC03 the perfect choice for industrial memory applications.

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