
Allicdata Part #: | S25FL256SAGMFVG01-ND |
Manufacturer Part#: |
S25FL256SAGMFVG01 |
Price: | $ 3.02 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 256M SPI 133MHZ 16SOIC |
More Detail: | FLASH - NOR Memory IC 256Mb (32M x 8) SPI - Quad I... |
DataSheet: | ![]() |
Quantity: | 1000 |
141 +: | $ 2.74939 |
Series: | FL-S |
Packaging: | Tube |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 256Mb (32M x 8) |
Clock Frequency: | 133MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | SPI - Quad I/O |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 105°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 16-SOIC (0.295", 7.50mm Width) |
Supplier Device Package: | 16-SOIC |
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The S25FL256SAGMFVG01 is a type of non-volatile memory specifically designed and engineered for temporal data storage. This memory offers high operating temperature ability, strong endurance capability and robust error checking and correction (ECC). The S25FL256SAGMFVG01 is a type of serial NAND flash memory that is most commonly used in solid-state storage applications. It is an ideal solution for data storage in applications such as automotive, industrial, medical and aerospace.
The S25FL256SAGMFVG01 is a type of non-volatile memory that uses a Serial Peripheral Interface (SPI) to communicate with the host. The SPI interface allows fast data transfer speeds, greater endurance and allows multiple devices to be interfaced to reduce pin count. The device also utilizes a product-level error detection code (EDC) and built-in error correction capabilities. This helps protect stored data from being corrupted due to soft errors in the non-volatile memory cells.
The S25FL256SAGMFVG01 is designed to operate from –25°C to +85°C and can provide a 3.3V power supply. It is designed for use in applications which require higher speed, low power consumption and superior reliability. The data retention period of the S25F256SAGMFVG01 is 20 years or more. The device is available in densities of 256Mbits and offers write cycles up to 100,000 and read cycles up to 1,000,000.
The working principle of the S25FL256SAGMFVG01 is based on Flash memory, also known as NAND Flash. In Flash memory cells, the storage elements consist of floating gate transistors that can be programmed with a voltage. The programming process is divided into two cycles, where the first cycle writes a bit to a cell and the second cycle reads the voltage from the cell. The voltage read from the cell determines the state of the data, either a 1 or 0.
The S25FL256SAGMFVG01 is designed for use in applications which require high speed, low power consumption and superior reliability. It offers fast data transfer speeds, high endurance, robust error checking and correction. This non-volatile memory device is ideal for applications such as automotive, industrial, medical and aerospace.
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