
Allicdata Part #: | 1274-1086-ND |
Manufacturer Part#: |
S25FL512SAGBHIC10 |
Price: | $ 6.15 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 512M SPI 133MHZ 24BGA |
More Detail: | FLASH - NOR Memory IC 512Mb (64M x 8) SPI - Quad I... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 5.59440 |
Series: | FL-S |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (64M x 8) |
Clock Frequency: | 133MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | SPI - Quad I/O |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 24-TBGA |
Supplier Device Package: | 24-BGA (8x6) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
S25FL512SAGBHIC10 is an advanced and efficient Non-Volatile memory device, based on the NAND flash and 3D NAND flash technology. It is widely used in various applications due to its reliable performance, high speed, low power consumption and cost effectiveness.
S25FL512SAGBHIC10 provides maximum data storage in a secure, durable and reliable way. It can provide up to 512 gigabytes of non-volatile memory. It is designed with the latest 3D NAND architecture which enables high performance, low power consumption and high data density. The device is easy to use and program, which makes it suitable for a wide range of applications.
S25FL512SAGBHIC10 is mainly used in embedded applications such as microcontrollers, embedded systems, medical systems, automotive systems and other consumer electronic products. It is also used in industrial automation and automation systems.
In addition to its use in various applications, S25FL512SAGBHIC10 is also used in data mining and data storage applications. Its high speed and low power consumption make it suitable for these applications.
The working principle of S25FL512SAGBHIC10 relies on the NAND flash technology. The flash memory is divided into two basic components: cells and gates. Each cell in the NAND flash is composed of two transistors and two capacitors. The transistor will store the data and the capacitor will hold the charge which will be used to program the data. To program the NAND flash, the transistor will be used to connect the source and the drain. Between the two capacitors, charge will be transferred from the source to the drain. Once the charge has been transferred, the data will be programmed into the NAND flash.
S25FL512SAGBHIC10 is an efficient and advanced non-volatile memory device which is widely used in various applications. Its high speed, accuracy and low power consumption make it suitable for data storage and data mining applications. Its NAND flash technology provides reliable and secure data storage which makes it suitable for various embedded systems.
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