S25FL512SAGBHIS10 Allicdata Electronics
Allicdata Part #:

428-4341-ND

Manufacturer Part#:

S25FL512SAGBHIS10

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 512M SPI 133MHZ 24BGA
More Detail: FLASH - NOR Memory IC 512Mb (64M x 8) SPI - Quad I...
DataSheet: S25FL512SAGBHIS10 datasheetS25FL512SAGBHIS10 Datasheet/PDF
Quantity: 138
Stock 138Can Ship Immediately
Specifications
Series: FL-S
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI - Quad I/O
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (8x6)
Description

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The S25FL512SAGBHIS10 is a new type of memory that is gaining popularity in a variety of applications. It is a type of flash memory that is fast, reliable, and highly efficient. Flash memory is a type of non-volatile memory that stores data in a series of floating gates. This type of memory does not require power to maintain its data, making it an attractive choice for applications that need to store large amounts of data. In this article, we will discuss the applications and working principles of the S25FL512SAGBHIS10.

The S25FL512SAGBHIS10 is a great choice for many applications because it offers excellent performance. The device features a high read speed of up to 50MB/s, a write speed of up to 40MB/s, and a data retention time of up to 20 years. This combination of performance characteristics makes it a great choice for applications that need to access large amounts of data quickly. The device also has a wide operating temperature range, making it suitable for use in a variety of environments. Additionally, the device is resistant to shocks and vibrations, making it a reliable choice for challenging applications.

The S25FL512SAGBHIS10 utilizes a two-level multi-level cell (MLC) technology, which is a type of flash memory that stores two bits of data per cell. This allows the device to store more data in a smaller area, making it more efficient and cost-effective than other types of memory. Additionally, the device has a feature known as wear-leveling, which ensures that data is distributed evenly across the entire chip and not just concentrated in certain areas. This makes the device more reliable and increases its lifespan.

When it comes to the working principle of the S25FL512SAGBHIS10, the device utilizes a circuit that includes an array of flash memory cells. When data is written to the device, the cells are arranged in a certain pattern and two bits of data are stored per cell. This data is then read from the device by using a special type of circuitry that detects the bits stored in each cell. This process is known as programming and is used to store and retrieve data from the memory.

The S25FL512SAGBHIS10 is a reliable and efficient type of flash memory that is ideal for a variety of applications. Its high speed, long data retention time, wide operating temperature range, and resistance to shocks and vibrations make it a great choice for applications that need to access large amounts of data quickly. Additionally, its two-level MLC technology and wear-leveling feature make it more reliable and cost-effective than other types of memory. Finally, its working principle utilizes a special type of circuitry that is able to store and retrieve data from the memory quickly and efficiently.

The specific data is subject to PDF, and the above content is for reference

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