Allicdata Part #: | S25FL512SAGBHVC13-ND |
Manufacturer Part#: |
S25FL512SAGBHVC13 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 512M SPI 133MHZ 24BGA |
More Detail: | FLASH - NOR Memory IC 512Mb (64M x 8) SPI - Quad I... |
DataSheet: | S25FL512SAGBHVC13 Datasheet/PDF |
Quantity: | 1000 |
Series: | FL-S |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (64M x 8) |
Clock Frequency: | 133MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | SPI - Quad I/O |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 105°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 24-TBGA |
Supplier Device Package: | 24-BGA (8x6) |
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S25FL512SAGBHVC13 is a Memory part from S25FL family which is designed by Cypress Semiconductor. It is consist of Flash memory and EEPROM memory, and it is made with CMOS Technology. It has a small form factor with a size of 4.90mm x 4.90mm and also has a large voltage range. This Memory part can support up to 25MHz of Clock Frequency which makes it ideal for data storage and data processing applications.
This Memory part is mainly used in applications such as industrial, automotive, networking, embedded, and high-end consumer electronics. It is equipped with features such as low power consumption, fast access time, and high storage capacity. The low power consumption feature makes it ideal for applications which require high reliability and low power consumption, while the fast access time feature makes it suitable for applications which require quick access to stored data. With its high storage capacity, this Memory part can be used for storing large amounts of data.
The S25FL512SAGBHVC13 working principle is based on the Flash Memory technology. It utilizes a Flash Memory array divided into multiple sectors, called blocks. Each block within the array contains a certain number of bytes, and each byte can be programmed with a particular data value. Once a byte is programmed, it can be altered by rewriting its value with a new value. When all the bytes in a certain sector are programmed with the same data value, the sector is marked as programmed. This marking process is known as programming.
The information stored on the Memory array can then be retrieved by reading out the data stored in each byte. This whole process takes place inside an integrated EEPROM controller. The EEPROM controller stores the programmed data and commands it to the Flash Memory array. This whole process takes place in just a few milliseconds and the data stored in the Flash Memory array is kept safe and secure.
In conclusion, the S25FL512SAGBHVC13 is a Memory part ideal for data storage and data processing applications. It is equipped with low power consumption, fast access time and high storage capacity making it suitable for various applications. Its Flash Memory and EEPROM Memory technology make it excellent for managing large amounts of data securely.
The specific data is subject to PDF, and the above content is for reference
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