S25FL512SAGMFMG10 Allicdata Electronics
Allicdata Part #:

S25FL512SAGMFMG10-ND

Manufacturer Part#:

S25FL512SAGMFMG10

Price: $ 7.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 512M SPI 133MHZ 16SO
More Detail: FLASH - NOR Memory IC 512Mb (64M x 8) SPI - Quad I...
DataSheet: S25FL512SAGMFMG10 datasheetS25FL512SAGMFMG10 Datasheet/PDF
Quantity: 1000
240 +: $ 6.36269
Stock 1000Can Ship Immediately
$ 7
Specifications
Series: Automotive, AEC-Q100, FL-S
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI - Quad I/O
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is an important part of the computer system, and it is responsible for temporarily storing data and programs in A RAM or ROM storage devices. S25FL512SAGMFMG10 is a type of flash memory that is suitable for various applications.

S25FL512SAGMFMG10 belongs to the serial NAND type flash memory, and its main feature is that it comes with a dual/quad-mode 8-pin SOIC package. This package type is so small that it is ideal for applications which require minimal Board Space. In addition, it offers a storage Capacity up to 128 Mb and operates on 1.8 V power supply. With S25FL512SAGMFMG10, designers are able to save a lot of space on the Board, and meet their ever-increasing demand of power, speed, and Storage Capacity.

S25FL512SAGMFMG10 is suitable for a wide range of applications such as automotive, industrial, consumer, and medical, to name a few. These applications utilize the an S25FL512SAGMFMG10\'s fast read/write speed, minimal power consumption and large Storage Capacity. Other features include write protect, busy/not busy flag, block erase, and address access. All these features make the S25FL512SAGMFMG10 an ideal flash memory for various applications.

S25FL512SAGMFMG10 works based on the split-gate vertical NAND flash memory cell. The greater the number of channels, the higher is the storage Capacity. The Data is organized based on Pages, and each Page has several blocks. All data stored in the memory can be modified without any disturbance to the other data. All commands and parameters can be programmed through the serial interface.

The S25FL512SAGMFMG10 flash memory provides robust performance, high reliability, and low power consumption with its low voltage gate oxide technology. It is a versatile solution for applications that require a compact, high-performance Storage device. Moreover, its features are designed to offer designers tremendous flexibility when it comes to implementing new designs. Ultimately, the S25FL512SAGMFMG10 enables designers to offer products with storage capacities and read/write performance that meet the needs of the most demanding applications.

The specific data is subject to PDF, and the above content is for reference

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