S25FL512SDPBHB213

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S25FL512SDPBHB213 is a component of semiconductor memory designed and manufactured by Cypress Semiconductor, a global provider of memory ICs. The component is an SPI NOR Flash memory with a capacity of 512Mb and uses the ONFI nanometer Wide Bus Interface (NAND) architecture, which is widely used in the manufacture of innovative products that require high performance and reliable operation. The component is widely used in consumer and industrial applications for reading, writing, and executing code procedures, and data storage.

The S25FL512SDPBHB213 is designed to be software compatible with the industry standard SPI NOR Flash, and it is available in 208-ball TFBGA and 24-pin SOIC packages to support various applications. The component is also compliant with the industry-leading SPI 2.0 standard, which is designed to allow write speeds of up to 50 MB/s. Additionally, the component has advanced features such as a fast page write operation, dual-bit error correction code support, and an enhanced cyclic redundancy check.

The S25FL512SDPBHB213 is also designed to offer superior power consumption performance of as low as 200ΜΑ active power and a standby power consumption of 10μA, and is widely used in consumer electronics, automotive systems, industrial process control, and consumer applications. This component offers a combination of fast data transfer speeds, high endurance, and low power consumption for a broad range of applications.

The S25FL512SDPBHB213 has a wide range of applications and is capable of withstanding temperatures ranging from -40°C to +85°C, making it an ideal solution for operation in various challenging environments. The component supports fast sequential and page programming operations with a program speed of up to 50MB/s and a data retention of greater than 10 years. Additionally, the component is able to support page read operations at up to 100MB/s, as well as random read or random write operations.

The S25FL512SDPBHB213 is built on a NAND architecture and employs a two-wire serial interface which allows its users to easily configure the device. The interface also supports Dual Output Fast Read, Dual Input Fast Program and Dual Input Buffer Programming. The component is highly reliable, with a durability of more than 1.5 million write cycles, and is ideal for use in applications that require high data retention, as well as high endurance.

The working principle of the S25FL512SDPBHB213 is based on the need to store digital information in a non-volatile manner. The device is designed to retain digital information even when powered off and uses flash memory cells that are programmed by injecting electric charges into them. Flash memory cells are arranged in a grid-like array and can be programmed and erased individually in groups, or even an entire block at once.

In order to write information to a memory cell, the device\'s control logic will read the contents of the address and then send an electric charge into the memory cell. To erase the data, the control logic will read the status of the cell and then direct an electric field towards the cell, which causes its contents to be erased.

The S25FL512SDPBHB213 is a powerful device that has numerous applications in various industries, from consumer electronics to industrial process control and automotive systems. With a capacity of 512Mb and a high data transfer rate, the device is highly reliable and offers superior power consumption performance as well as a long data retention period.

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