S25FL512SDPBHI210

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S25FL512SDPBHI210

Application Field

S25FL512SDPBHI210, which meaning serial flash 512Mb Density Branded Hi-Reliability Industrial Reliability Grade, is a high-density, low-power flash memory product. It is a good choice for system designers and embedded engineers who need the highest reliability and long life cycle support products.

The S25FL512SDPBHI210 is well-suited for automotive, aerospace, industrial, medical and consumer applications requiring a robust memory solution. The device is designed to deliver the highest levels of reliability over a wide temperature range, according to automotive and industrial grade standards. It also includes additional features to enhance the data retention and reliability of the device, including low power states and enhanced error-correction codes.

Working Principle

S25FL512SDPBHI210 is a new flash memory device, the working principle of this device is based on charge injection and successive electron transfer phenomena. The memory cell is comprised of a field oxide (gate oxide), a floating gate and a control gate, arranged in series. The charge injection process is used to write binary data into the floating gate of the memory cells. When a write command is issued, electrons flow into the floating gate, changing the threshold voltage in the floating gate.

When read operation is started, the stored charges on the floating gate control the voltage level of control gate. This effect is used to sense the stored data using a sense amplifier. The memory cell is insensitive to all types of radiation, since it consists of a stack of MOSFETs without electrons stored. Hence, the device provides high-reliability data protection over high-temperature and shock/vibration environments, ensuring reliable data read/write operations.

S25FL512SDPBHI210 features two power-saving modes that can help extend the battery lifetime, these are the Sleep and Deep-Power-Down Modes. The Sleep Mode reduces the current consumption from 25mA to 2mA, whereas the Deep-Power-Down Mode reduces the current consumption to 0.1mA.

Thanks to these power savings, the S25FL512SDPBHI210 can enable design engineers to perform more complex tasks for longer periods of time, ultimately freeing up more resources and system time. This cleverly designed memory can store up to 512Mbits of non-volatile data and is available in a variety of packages to fit the needs of most embedded projects.

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