
Allicdata Part #: | S25FL512SDPBHI213-ND |
Manufacturer Part#: |
S25FL512SDPBHI213 |
Price: | $ 4.26 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 512M SPI 66MHZ 24BGA |
More Detail: | FLASH - NOR Memory IC 512Mb (64M x 8) SPI - Quad I... |
DataSheet: | ![]() |
Quantity: | 1000 |
2500 +: | $ 3.87644 |
Specifications
Series: | FL-S |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (64M x 8) |
Clock Frequency: | 66MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | SPI - Quad I/O |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 24-TBGA |
Supplier Device Package: | 24-BGA (8x6) |
Description
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S25FL512SDPBHI213 Application Field and Working Principle
Introduction
S25FL512SDPBHI213 is an embedded non-volatile memory chip from the SPANSION family of memory products. It is a NOR type flash memory device with an on-board controller that can store up to 512 Mb (262,144 Kb) of data. The device is designed to operate at low power with minimal drop-in replacement time. It also has built-in ECC (error correction code) to ensure data integrity.Application Field
S25FL512SDPBHI213 NOR Flash memory has a wide range of applications. It can be used in automotive and industrial applications, such as instrument control, medical equipment, and navigation systems. It is also suitable for embedded storage solutions and multimedia applications, such as digital cameras, videocameras, audio players, and portable game consoles. Additionally, it can be used in mobile phones, PDAs, and media players.Working Principle
S25FL512SDPBHI213 NOR Flash memory operates on the principle of semiconductor memory discretes, which employ the storing of information in discrete polar regions of a semiconductor substrate. The cells of this memory are arranged in grids, with each cell containing a charge-storing gate. During the programming process, charges are transferred from the gate to the substrate, thereby changing the cell to either a logic 0 or logic 1. This charge transfer is accomplished through the application of a programming voltage.The memory is programmed and erased by injecting electrons into and out of the polar region of the cells. The electrons are propelled into or driven out of the cell by applying either an electrical or optical pulse, depending on the device. These pulses allow the devices to store binary information in a non-volatile fashion. The cells are divided into pages of 512-bytes and the word size is 8- or 16-bits.Conclusion
S25FL512SDPBHI213 is a NOR type Flash memory chip suitable for a range of automotive and industrial applications, as well as embedded storage solutions and multimedia applications. This memory operates on the principle of semiconductor memory discretes, which employ the storing of information in discrete polar regions of a semiconductor substrate. Erasing and programming the memory is done by injecting electrons into and out of the polar region of the cells. All in all, S25FL512SDPBHI213 NOR Flash memory is an ideal choice for a broad range of applications.The specific data is subject to PDF, and the above content is for reference
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