S25FL512SDSMFM013 Allicdata Electronics
Allicdata Part #:

S25FL512SDSMFM013-ND

Manufacturer Part#:

S25FL512SDSMFM013

Price: $ 6.76
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC NOR
More Detail: Memory IC
DataSheet: S25FL512SDSMFM013 datasheetS25FL512SDSMFM013 Datasheet/PDF
Quantity: 1000
1450 +: $ 6.14557
Stock 1000Can Ship Immediately
$ 6.76
Specifications
Series: *
Part Status: Active
Description

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Memory is an important part of modern electronics systems. A memory device can temporarily or permanently store information or data in an integrated circuit, and it can be read or written to by a processor. The S25FL512SDSMFM013 memory device is a high-speed, high-density type of memory device consisting of 512 Mbits of NOR Flash memory cells. It is offered in the space-saving 8-pin mini small-outline package (USOP8). This memory device is ideal for a wide range of applications, including automotive, consumer electronics, industrial, and communications.

S25FL512SDSMFM013 application

The S25FL512SDSMFM013 can be used in many applications. It is widely used in consumer electronics, such as entertainment systems and digital cameras. It is also used in automotive systems, such as electronic engine controls, sensors and actuators, and car navigation systems. In addition, it is also used in industrial, communications and military/aerospace applications.

S25FL512SDSMFM013 working principle

The S25FL512SDSMFM013 utilizes the floating-gate (FG) cell technology, wherein charge injection incurred during the write process is regulated. This is done by providing two small FGs, wherein an appropriate amount of charge is injected onto the two FGs. This helps decrease the erase/write endurance, thereby addressing the need for reliable, low-power and high-endurance Flash memory.

The S25FL512SDSMFM013 also features a nonvolatile field-programmable (FP) array. This allows the user to reprogram the stored data without erasing the data previously stored in the memory. The memory is programmed by applying a voltage to the memory cell gate. This voltage causes the charge to be injected onto the gate and the stored data is rewritten. The cells are erased by applying another voltage to the cell gate.

The S25FL512SDSMFM013 is an innovative memory device that offers great performance while consuming very little power. It is an ideal solution for applications that require low power consumption and high performance.

The specific data is subject to PDF, and the above content is for reference

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