S25FS064SAGBHV020

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S25FS064SAGBHV020 is a serial NOR flash memory developed using the latest localized floating gate memory technology. With a capacity of up to 64Mbits, it is an excellent product for embedded applications that require high performance, robustness and stability. It has an industry-leading BIN and is available in densities ranging from 2Mbits to 64Mbits. This makes it suitable for a wide range of applications.

The S25FS064SAGBHV020 is a robust, high-performance flash memory with a wide range of features. It has a fast random read speed of up to 70MHz and a programming speed of up to 7MHz. It also has an erase speed of up to 250 ns. It has excellent ECC (Error Correcting Code) performance, allowing for a high level of data integrity. Its high program and erase endurance of 4K cycles makes it suitable for long-term use in demanding environments.

S25FS064SAGBHV020 is ideal for use in a variety of applications including audio, video, communications, automotive, industrial and medical products. It is designed for high performance in a variety of embedded systems, ranging from low power to high performance. It is also ideal for applications using small form factor architectures such as systems-in-package and board-on-chip solutions.

The working principle of the S25FS064SAGBHV020 is based on the localized floating-gate memory technology. This technology utilizes a floating gate placed between the channel and the source/drain of the MOSFET transistors. This floating gate stores electrical charge and acts as a threshold switch. The flash memory device relies on the localized floating-gate’s behavior to store data. The data is written to the memory by charging and discharging the floating gate. When applying a positive or negative potential (polarity) on the floating gate, its relative charge changes, allowing the MOSFET to achieve its on or off states. This process is used to store data.

In summary, the S25FS064SAGBHV020 is an excellent serial NOR flash memory designed for high-performance applications requiring a robust, stable and reliable device. Its low power consumption and high random read speed make it ideal for embedded systems requiring low power and fast random read performance. Its wide range of application fields and its high program and erase endurance make it an attractive choice for industrial and medical applications. Its working principle is based on localized floating-gate memory technology which enables write, read and erase operations, allowing the device to store data.

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