S25FS064SDSBHN020 Allicdata Electronics
Allicdata Part #:

S25FS064SDSBHN020-ND

Manufacturer Part#:

S25FS064SDSBHN020

Price: $ 2.43
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 64M SPI 80MHZ 24FBGA
More Detail: FLASH - NOR Memory IC 64Mb (8M x 8) SPI - Quad I/O...
DataSheet: S25FS064SDSBHN020 datasheetS25FS064SDSBHN020 Datasheet/PDF
Quantity: 25
1 +: $ 2.21130
Stock 25Can Ship Immediately
$ 2.43
Specifications
Series: FS-S
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Clock Frequency: 80MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI - Quad I/O
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-FBGA (6x8)
Description

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S25FS064SDSBHN020 is an important type of memory with many applications and has a distinct operation principle. It is a single-level cell (SLC) flash memory device that combines deep power down mode, enhanced endurance and reliability, as well as faster programming speeds.

The most common applications of S25FS064SDSBHN020 memory are in industrial, medical, enterprise and consumer electronics. It is widely used in a variety of embedded systems, ranging from PCs and laptops to wearables and mobile phones and tablet PCs. In addition, it is also commonly used in automotive systems, GPS navigations and other consumer products.

S25FS064SDSBHN020 also has a specific operating principle which utilizes the combination of NAND Flash cells, NOR Flash cells and complicated logic circuitry to provide a more cost-effective solution for data storage. This memory device is able to support multiple operations simultaneously using a Read-Write controller and multiple Flash Memory Enclosures. Each of these can store up to 16 gigabytes of data and can support a maximum clock frequency rate of 108MHz. Moreover, it also supports multiple programming commands that allow for fast read/write operations.

S25FS064SDSBHN020 memory is also extremely robust and reliable. The NAND Flash cells are able to resist voltage and temperature fluctuations and can also tolerate overdrive, thus making the memory highly reliable even in harsh conditions. In addition, the NOR Flash cells provides data preservation abilities even when power is lost, thus making the device extremely useful for mission-critical operations.

S25FS064SDSBHN020 memory is also able to offer improved endurance and reliability ratings. The device is able to achieve twice the expected endurance and can consequently offer a maximum life time of up to 100,000 write cycles. This, along with the lower voltages and speeds, make the device extremely reliable, even in environments with vibration or shock. In addition, the device also offers improved reliability, as the NAND and NOR Flash cells are able to save data even in case of power failure events.

Overall, S25FS064SDSBHN020 is an important type of memory which is increasingly used across different fraternities. Its single-level cell technology, combined with robust and reliable performance, makes the device suitable for a variety of applications and can prove to be extremely useful in embedded systems. Moreover, its improved endurance and reliability ratings increases its usability in mission-critical operations, thus making it an important type of memory for various industrial, medical, enterprise and consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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