
Allicdata Part #: | S25FS128SAGBHV203-ND |
Manufacturer Part#: |
S25FS128SAGBHV203 |
Price: | $ 2.02 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 128M SPI 133MHZ 24BGA |
More Detail: | FLASH - NOR Memory IC 128Mb (16M x 8) SPI - Quad I... |
DataSheet: | ![]() |
Quantity: | 1000 |
2500 +: | $ 1.83044 |
Series: | FS-S |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 128Mb (16M x 8) |
Clock Frequency: | 133MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | SPI - Quad I/O, QPI |
Voltage - Supply: | 1.7 V ~ 2 V |
Operating Temperature: | -40°C ~ 105°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 24-TBGA |
Supplier Device Package: | 24-BGA (8x6) |
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The S25FS128SAGBHV203 is a type of non-volatile memory such as Flash memory or EEPROM, a type of computer memory used for storing data even when the power is turned off. This form of memory is widely popular in various applications, with the S25FS128SAGBHV203 specifically being used in automotive, industrial, consumer and computing markets.
Application Field
S25FS128SAGBHV203 is a multi-purpose SPI NAND Flash memory for automotive, industrial, consumer and computing markets. It is suitable for applications requiring low power dissipation and high read/write throughput. It operates from a single 3.3 V power supply and can transfer data at a maximum speed of 104 MB/s. The S25FS128SAGBHV203 is offered in the following densities: 1 Gb, 2 Gb, 4 Gb and 8 Gb.
This device is used in automotive systems for the storage of map and navigation data, information systems, and as an audio recording medium. It is also an ideal solution for industrial applications such as tag memory and medical instrumentation. Additionally, the S25FS128SAGBHV203 is suitable for consumer applications such as digital cameras, multimedia players, and portable music players.
Working Principle
The working principle of the S25FS128SAGBHV203 is not unlike any other type of non-volatile memory. It uses some combination of Flash cells, which are arrays of floating-gate transistors, and Fuse cells to store data. When power is applied to the Flash cells, the voltage of the stored data can be extracted. The information stored in the Fuse cells is permanent and unalterable.
The S25FS128SAGBHV203 has both single level cell (SLC) and multi-level cell (MLC) support. In SLC mode, each Flash cell stores 1 bit of data. In MLC mode, each Flash cell stores 2 or more bits, which increases the storage capacity of the device significantly.
To write or program the device, power is applied and the data to be stored is presented as a write command. To read or erase a device, the power is applied, and then the desired data is presented as a read or erase command, respectively. The chip uses an industry-standard 8-pin SPI protocol to communicate with the external controller.
The S25FS128SAGBHV203 also provides enhanced security and reliability with the support of advanced error-correcting code (ECC) technologies. ECC ensures the integrity of stored data, effectively preventing data corruption and resolving errors that may occur due to noise or radiation.
The S25FS128SAGBHV203 is a low-power and high-throughput memory device that is suitable for a wide variety of automotive, industrial, consumer and computing applications. It offers excellent reliability and enhanced data security with the support of advanced ECC technology.
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