S25FS256SAGBHI200

Series:	FS-S
Packaging:	Tray
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	256Mb (32M x 8)
Clock Frequency:	133MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	SPI - Quad I/O, QPI
Voltage - Supply:	1.7 V ~ 2 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	24-TBGA
Supplier Device Package:	24-BGA (8x6)

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<div class="Memory"><h2>S25FS256SAGBHI200 Application Field and Working Principle</h2><p>S25FS256SAGBHI200 is a type of semiconductor memory (non-volatile memory) integrating advanced 40nm process technology, Flash Floating Gate and EEPROM technology. It is used in automotive and consumer electronics in industrial applications, embedded systems and in microcontroller-powered applications. This type of memory is commonly used in embedded system designs, portable consumer electronics and automotive applications.</p><h3>Application Field of S25FS256SAGBHI200</h3><p>S25FS256SAGBHI200 is a high density Serial flash memory with a space saving 8-pin package, ideal for small but demanding projects. It comes with 8 Kbyte, 16 Kbyte, 32 Kbyte and 64 Kbyte of memory and features a fast program, byte and page erase, random and block read and write access.</p><p>S25FS256SAGBHI200 is specialized for short/long data storage with critical absolute data retention. It also offers multiple erase and write cycles with extra endurance capabilities and a 100 year data retention time, making it suitable for automotive applications and consumer electronics designs. With a minimum operating voltage of 1.8V, it can address the entire memory array from a single address without the need for chip select signals, and can also access certain sectors of data at a single 1.8V cycle. The device also comes with advanced features such as: block protect bits, fast write and suspend modes, program and erase suspend/resume, page/byte programming and write protect.</p><p>Apart from that, S25FS256SAGBHI200 is also used in industrial applications such as PLCs, portable devices, measuring instruments and other low power, small form factor systems. It is also used in medical devices, microcontroller-powered and IoT applications such as smart home and other connected devices.</p><h3>Working Principle of S25FS256SAGBHI200</h3><p>S25FS256SAGBHI200 is a memory device which is built up of multiple cells, each of which holds a single bit of data. Each cell consists of two transistors, which are used to store a single bit of data. The two transistors work together to store the bit of data; one is referred to as the floating-gate and the other determines if the data at the cell is a ‘1’ or a ‘0’. </p><p>Internally, the two transistors used within the cell are connected to two separate control lines; the first control line is used to read the data stored in the cell, while the second is used to write new data into the cell. When writing data into the cell, a small voltage is applied onto the second control line which can either add or remove electrons from the floating-gate. </p><p>The way the data is stored within each cell depends on the presence or absence of electrons inside the floating-gate (also known as the INPUT transistor); if there are electrons present then the cell’s ‘1’ state will be stored and if there are no electrons present then its ‘0’ state will be stored. This is why the two control lines are so important, as the first one is used to read the electrons from the floating-gate and the second one is used to write them.</p><p>S25FS256SAGBHI200 uses a non-volatile memory cell, meaning that it can retain data even without a power supply. This is because the floating-gate within the cell has a very high capacity; it can store a certain number of electrons for a very long time and still keep its original state unchanged. </p><p>In summary, S25FS256SAGBHI200 is a high-density non-volatile memory device which is used in a wide range of applications and can retain data for up to 100 years. It has advanced features, including fast program and erase, byte and page access, suspend/resume modes and multiple erase and write cycles.</p></div>

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