
Allicdata Part #: | S25FS512SAGBHM210-ND |
Manufacturer Part#: |
S25FS512SAGBHM210 |
Price: | $ 6.65 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC NOR |
More Detail: | Memory IC |
DataSheet: | ![]() |
Quantity: | 1000 |
338 +: | $ 6.04789 |
Series: | * |
Part Status: | Active |
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S25FS512SAGBHM210 is a type of memory produced by Micron, that is composed of a single die of flash memory. This type of memory is characterized by its performance, making it suitable for a variety of applications. It is a small, low-cost, low-power and low-latency storage solution that can offer a range of use cases in many types of embedded systems.
In order to have an understanding of the applications resulting from the use of the S25FS512SAGBHM210, it is useful to look at its main features. This type of memory is NAND-flash based, allowing for fast read and write speeds, high capacities and low-power operation. Additionally, it features an 8-bit interface and a 4-bit interface. Additionally, it is capable of supporting XIP (Execute in Place), which allows for code to be executed directly from the memory, rather than having to be transferred to the RAM.
Due to its features, the S25FS512SAGBHM210 is particularly suitable for devices like medical equipment and industrial controllers, where it can be used for data storage. Its high performance, low-cost and low voltage operation make it a great value for devices needing reliable and fast storage. Additionally, it is suitable for automotive, industrial and consumer electronics applications, as well as IoT (Internet of Things) applications.
In terms of working principle, the S25FS512SAGBHM210 is based on the NAND-type flash memory architecture. This type of memory makes use of an array of floating-gate transistors to store data in non-volatile memory cells, thus allowing the memory to retain data without being powered up. Data is written to the memory cells by applying an electric charge to the floating gate transistors, which allows the transistors to be charged, resulting in a change of state, thus creating the data. When it comes to ‘reading’ the data, the transistors are again charged and the amount of charge present can be used by the memory controller to determine the logic state.
In relation to power requirements and energy efficiency, the S25FS512SAGBHM210 features an energy efficient design which reduces power consumption to as low as 0.23 mW/MHz when reading. Its high performance, low-latency and low-power operation allows for cost-effective design and implementation.
Therefore, the S25FS512SAGBHM210 memory is a high performing, cost effective and low power storage solution which offers numerous applications in industries such as automotive, medical, industrial and consumer electronics. Its NAND-type flash memory architecture and its energy efficient design make it a valuable asset in the embedded systems market.
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