S25FS512SDSBHB210

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S25FS512SDSBHB210 is a type of non-volatile flash memory developed by Toshiba Memory Corporation. It is categorized as a type of NAND Flash memory, which is a kind of non-volatile memory technology designed to store digital information. The S25FS512SDSBHB210 is ideal for applications that require non-volatile, high-density storage of code and data such as microcontrollers, automotive infotainment systems and video surveillance systems.

S25FS512SDSBHB210 is a stacked memory architecture which combines a control gate, floating gate, FLOTOX-based double polysilicon process and a technology called Distributed-Source Line (DSL) which eliminates the need for costly and bulky level shifters. This means that it has faster write and erase speeds, higher endurance and higher levels of integration for better system performance.

The main advantages of the S25FS512SDSBHB210 are its small size, high storage capacity, low power consumption and fast write and erase speeds. Its small form factor enables it to fit in smaller devices such as smartphones, digital cameras and automotive modules, while its large storage capacity allows it to store large amounts of data even in a limited space. Additionally, its low power consumption makes it well suited for low-power applications such as IoT and wearables.

The working principle of S25FS512SDSBHB210 is based on NAND Flash technology. NAND Flash memory is composed of cells organized in blocks and pages; the memory cells store a single bit of information, while a group of memory cells stores a single byte. To write data to the S25FS512SDSBHB210, a voltage is applied to selected cells within a block and a page to program the data. To erase data, the cells are discharged to erase the data. The entire block must be erased before new data can be written.

The performance of the S25FS512SDSBHB210 depends on several factors such as the number of blocks and pages, the voltage applied to the cells and the type of commands used. The S25FS512SDSBHB210 offers up to 528MB/s of sequential read speed, and up to 380MB/s of sequential write speed, which is faster than other NAND Flash memory devices. Additionally, it has a Random Read/Write speed of up to 100,000 IOPS and an erase speed of up to 800 microseconds.

The S25FS512SDSBHB210 offers a wide range of features and benefits that make it well suited for a variety of applications such as microcontrollers, automotive infotainment systems, video surveillance systems, video streaming, drones and more. Additionally, it can be used in environments ranging from -20 ° C to +95 ° C, so it can be used in a wide range of temperatures. Moreover, the S25FS512SDSBHB210 is RoHS compliant, which makes it environmentally friendly.

In conclusion, the S25FS512SDSBHB210 is a type of non-volatile NAND Flash memory that offers high storage capacity, low power consumption and fast write and erase speeds. Its wide range of features make it well suited for a variety of applications, while its temperature range and RoHS compliance make it environmentally friendly. As a result, the S25FS512SDSBHB210 is an ideal solution for applications that require non-volatile, high-density storage.

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