S27KS0641DPBHV023 Allicdata Electronics
Allicdata Part #:

428-3861-2-ND

Manufacturer Part#:

S27KS0641DPBHV023

Price: $ 2.74
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC DRAM 64M PARALLEL 24BGA
More Detail: DRAM Memory IC 64Mb (8M x 8) Parallel 166MHz 40ns ...
DataSheet: S27KS0641DPBHV023 datasheetS27KS0641DPBHV023 Datasheet/PDF
Quantity: 1000
2500 +: $ 2.49272
Stock 1000Can Ship Immediately
$ 2.74
Specifications
Series: HyperRAM™
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 64Mb (8M x 8)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: --
Access Time: 40ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (6x8)
Description

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Memory is an essential part of modern technology, allowing us to store data, information, and other digital content. Memory is composed of several components, all of which have their own functions, and one of the most important components is the S27KS0641DPBHV023. This article will discuss the application field and working principle of this device.

Introduction to S27KS0641DPBHV023

S27KS0641DPBHV023 is a type of memory chip produced by Renesas Electronics. It is a small, low-power Static Random Access Memory (SRAM) device with a maximum capacity of 64KB. It offers several features, such as high performance, low-voltage operation, minimal power consumption, high reliability, and a wide temperature range. The device also offers a wide range of communication protocols, making it suitable for a variety of applications.

Application Fields for S27KS0641DPBHV023

The S27KS0641DPBHV023 is suitable for a range of applications due to its low-power, high-performance characteristics. Its combination of a wide communication protocol variety and a low-power feature makes it an ideal choice for embedded applications such as industrial automation, automotive, and consumer products. Its wide temperature range ensures that the memory can withstand extreme temperatures and conditions, making it suitable for use in harsh environments. Additionally, the high reliability of the device makes it suitable for use in mission-critical applications.

Working Principle of S27KS0641DPBHV023

The S27KS0641DPBHV023 is a Static Random Access Memory (SRAM) device, which means that it does not require a capacitor or an additional power supply for data stored. SRAMs store data using transistors and capacitors. The transistors store the data and the capacitors are used to temporarily hold the data in memory. When data is requested, the transistors switch to cause the data to change from 0 to 1 or from 1 to 0, and the capacitors will hold the data until it is requested again.

The S27KS0641DPBHV023 is composed of multiple logic levels which can each store a single bit of data. Each logic level is connected to its own internal power supply and is accessed through a single address port, which is used to select a specific bit of data. Once the address is selected, the logic levels are switched and data is read or written.

Conclusion

The S27KS0641DPBHV023 is a low-power Static Random Access Memory (SRAM) device with a maximum capacity of 64KB and a wide range of communication protocols. It is suitable for a range of applications, including industrial automation, automotive, and consumer products. Additionally, its high reliability make it suitable for use in mission-critical applications. The working principle of the device is based on the use of transistors and capacitors, and the data is stored using logic levels which are connected to their own internal power supplies.

The specific data is subject to PDF, and the above content is for reference

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