S29XS256RABBHI010 Allicdata Electronics
Allicdata Part #:

S29XS256RABBHI010-ND

Manufacturer Part#:

S29XS256RABBHI010

Price: $ 4.57
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC NOR
More Detail: Memory IC
DataSheet: S29XS256RABBHI010 datasheetS29XS256RABBHI010 Datasheet/PDF
Quantity: 1000
377 +: $ 4.15638
Stock 1000Can Ship Immediately
$ 4.57
Specifications
Series: *
Part Status: Active
Description

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Memory is a key element of modern computing and S29XS256RABBHI010 is one of the most commonly used memories in recent years. This article will discuss its application field and working principle in greater detail.

Application Field

The S29XS256RABBHI010 is a high-speed non-volatile random access memory (NOR Flash) which is ideal for storing program code and executable files. It is a popular choice in many applications such as digital cameras, smartphones, gaming systems, and other consumer electronic devices. It is also used in automotive, aerospace, and industrial systems where the need for non-volatile memory is high.

This memory is being used for an ever-expanding range of applications, thanks to its low power consumption, wide operating temperature range and high reliability. It is used as the primary storage in many embedded systems, such as industrial automation, medical instruments, and other control systems.

Working Principle

At its core, S29XS256RABBHI010 uses floating gate MOSFET (metal oxide semiconductor field effect transistor) technology to store data. This technology is based on the principle that electricity is passed through microscopic oxide layers. When electricity is applied to the oxide layers, electrons are freed and can be used to store digital data in memory cells.

In order to read or write to the memory, voltage is applied to the memory cells and the electrons can be moved either inside or outside the floating gate. This process is known as “tunneling”. The voltage applied determines the level of current which will be used to move the electrons.

When a write operation is performed, electrons are moved from the drain to the source of the MOSFET while they are removed from the source to the drain during a read operation. When a read operation is performed, the voltage is reversed, with electrons being moved from the source to the drain, thus providing the read signal.

The S29XS256RABBHI010 has a wide range of features including low power, high stabilization, and excellent security. Its reliability and fast operation makes it a logical choice for today’s modern applications.

The specific data is subject to PDF, and the above content is for reference

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