S2B-13-F Discrete Semiconductor Products |
|
| Allicdata Part #: | S2B-FDITR-ND |
| Manufacturer Part#: |
S2B-13-F |
| Price: | $ 0.06 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | DIODE GEN PURP 100V 1.5A SMB |
| More Detail: | Diode Standard 100V 1.5A Surface Mount SMB |
| DataSheet: |  S2B-13-F Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.05544 |
| 6000 +: | $ 0.04990 |
| 15000 +: | $ 0.04435 |
| 30000 +: | $ 0.04158 |
| 75000 +: | $ 0.03687 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 100V |
| Current - Average Rectified (Io): | 1.5A |
| Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 1.5A |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 5µA @ 100V |
| Capacitance @ Vr, F: | 20pF @ 4V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AA, SMB |
| Supplier Device Package: | SMB |
| Operating Temperature - Junction: | -65°C ~ 150°C |
| Base Part Number: | S2B |
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The S2B-13-F is a single rectifier diode primarily used in high power switching applications. It is a very cost-effective and reliable alternative to Schottky diodes, which are traditionally used in this type of application. This diode is designed to be compatible with existing circuits and to provide superior performance when compared to other standard rectifiers.
The S2B-13-F rectifier diode is constructed with a single silicon barrier layer between the anode and the cathode. This barrier layer prevents current from freely flowing between the anode and the cathode. This design ensures that the diode can be used in a variety of applications, including high power switching and DC-DC power converters. The diode also features high frequency operation, low reverse recovery time, low forward voltage drop and excellent temperature resistance.
The main working principle behind this diode is the flow of current through the device. When the anode is in a high voltage state, more current will flow from the anode to the cathode. The barrier layer restricts the amount of current that can flow from the anode to the cathode, resulting in a low resistance load for the diode. The diode will not allow current to flow from the cathode to the anode, creating a one-way current path.
Another important feature of the S2B-13-F diode is its ability to withstand high surge currents. This is important in many applications, as it ensures that the diode can handle the current spikes that may occur during various operations. The diode also features high forward and reverse voltage ratings, which allow it to be used in a variety of applications.
The S2B-13-F rectifier diode is a popular choice for use in high power switching applications. Its low forward voltage drop and high surge current ratings make it suitable for use in applications such as DC-DC power converters. Additionally, its superior temperature resistance and reliable performance make it a popular choice for use in a variety of electronics. With its versatile capabilities and features, the S2B-13-F diode is a great choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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