S2D-E3/52T Discrete Semiconductor Products |
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Allicdata Part #: | S2D-E3/52TGITR-ND |
Manufacturer Part#: |
S2D-E3/52T |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 1.5A DO214AA |
More Detail: | Diode Standard 200V 1.5A Surface Mount DO-214AA (S... |
DataSheet: | S2D-E3/52T Datasheet/PDF |
Quantity: | 5250 |
750 +: | $ 0.07581 |
1500 +: | $ 0.05812 |
2250 +: | $ 0.05054 |
5250 +: | $ 0.04549 |
18750 +: | $ 0.04043 |
37500 +: | $ 0.03791 |
75000 +: | $ 0.03369 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 1.5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2µs |
Current - Reverse Leakage @ Vr: | 1µA @ 200V |
Capacitance @ Vr, F: | 16pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | S2D |
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Introduction of S2D-E3/52T
The S2D-E3/52T is a Single Rectifier Diode with a high current capacity and a high reverse voltage, capable of flowing voltage up to 1 KV. It is widely used in automotive and communication applications, due to its high power and low forward voltage drop.
Application Field of S2D-E3/52T
S2D-E3/52T is mainly used in automotive applications and communication applications for the following reasons:
- The diodes can withstand high temperatures, making them ideal for automotive and communication applications.
- The diode has a low forward voltage drop and high current capacity, making it well suitable for automotive applications.
- The diodes have a very high reverse voltage rating, giving them a high tolerance in communication applications.
- The diodes are very robust and can provide strong protection against electromagnetic interference in communication equipment.
The S2D-E3/52Ts are also ideal for UPS power protection, battery powered applications, and rectification circuit applications.
Working Principle of S2D-E3/52T
The S2D-E3/52T works by allowing electric current to flow in only one direction, thus acting as a rectifier. The internal circuitry of the S2D-E3/52T consists of a metal-oxide-semiconductor (MOS) field-effect transistors (MOSFET) and a Schottky diode. The MOSFET is used to control the on/off state of the diode, while the Schottky diode acts as a rectifier for the current flowing through the MOSFET.
When the voltage reaches a level above the breakdown voltage of the MOSFET, the MOSFET conducts and the Schottky diode is forward biased, allowing current to flow through it. When the voltage is below the breakdown voltage of the MOSFET, the MOSFET is off and the Schottky diode is reverse biased, blocking current from flowing. The S2D-E3/52T has a breakdown voltage of around 400V, which is much higher than traditional diodes.
Conclusion
In conclusion, the S2D-E3/52T is a single rectifier diode with a high current capacity and a high reverse voltage, making it suitable for a wide range of applications such as automotive and communication applications. The diode has an internal circuitry that consists of a MOSFET and a Schottky diode, allowing current to flow in only one direction, thus acting as a rectifier. The S2D-E3/52T is also suitable for UPS power protection, battery powered applications, and rectification circuit applications.
The specific data is subject to PDF, and the above content is for reference
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