S2G-M3/5BT

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	400V
Current - Average Rectified (Io):	1.5A
Voltage - Forward (Vf) (Max) @ If:	1.15V @ 1.5A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):	2µs
Current - Reverse Leakage @ Vr:	1µA @ 400V
Capacitance @ Vr, F:	16pF @ 4V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	DO-214AA, SMB
Supplier Device Package:	DO-214AA (SMB)
Operating Temperature - Junction:	-55°C ~ 150°C

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S2G-M3/5BT application field and working principle

Diodes are electrical semiconductor devices that are used as switches in electronic circuits. A diode can be thought of like a valve, allowing electrical current to flow in only one direction. Rectifiers are diodes that are used to convert an alternating current (AC) voltage into a direct current (DC) voltage. Single rectifiers are those containing one diode.The S2G-M3/5BT, also known as a generic avalanche diode, is a single, ultra-fast type of rectifier whose avalanche characteristic has low forward and reverse leakage currents. The device is a very efficient and reliable rectifier having two leads: an Anode lead and a Cathode lead. It can be used in various applications such as power supply, switching power or surge current protection, etc.The working principle of S2G-M3/5BT lies in the fact that when a positive voltage is applied to the Anode lead, electrons are injected into the diode\'s junction via the electric field. These electrons act as majority carriers and create a positive current flow in the diode called Anode current. The diode exhibits a certain amount of forward voltage drop, which is typically between 0.7 - 0.8 volts. This means that the anode current flowing through the diode is reduced, creating a voltage difference between the Anode and Cathode. This voltage difference combined with the electric field in the PN junction is responsible for preventing further increase in the Anode current when the applied voltage is raised beyond a certain level. This is known as reverse voltage breakdown of the diode and it is the feature that makes ultra-fast diodes so fast. The use of S2G-M3/5BT diode in high-frequency applications such as switching power supplies or surge current protection requires that its junction capacitance is minimized. This is possible through the use of ‘epitaxial growth’ technology which is used to create a thin layer of overly protective material above and between the contacts of the diode, reducing the capacitance and ensuring high switching speeds. This makes the S2G-M3/5BT diode perfect for use in high-frequency applications.The S2G-M3/5BT diode is capable of withstanding high reverse breakdown voltages up to 500V which makes it a perfect choice for applications that require a higher voltage rating such as lighting systems and surge protection systems. In addition, its very low reverse leakage current reduces power losses in the circuit and makes it a more efficient choice for all applications.In summary, the S2G-M3/5BT is an excellent single rectifier, capable of handling high-frequency applications due to its low junction capacitance and offering good reverse breakdown voltage and low leakage current properties. It is suitable for applications such as power supply, switching power or surge current protection and is a great choice for those looking for a reliable and efficient rectifier.

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