Allicdata Part #: | S2J-M3/52T-ND |
Manufacturer Part#: |
S2J-M3/52T |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GPP 1.5A 600V DO-214AA |
More Detail: | Diode Standard 600V 1.5A Surface Mount DO-214AA (S... |
DataSheet: | S2J-M3/52T Datasheet/PDF |
Quantity: | 1000 |
13500 +: | $ 0.05516 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 1.5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2µs |
Current - Reverse Leakage @ Vr: | 1µA @ 600V |
Capacitance @ Vr, F: | 16pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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S2J-M3/52T Application Field and Working Principle
The S2J-M3/52T is an ultra-fast recovery diode ideal for switching power applications due to its low forward voltage and high speed switching. It is suitable for medium current applications, such as computers and telecommunications systems, and has a low reverse leakage current. The S2J-M3/52T also exhibits a low shut-off time, making it a great choice for high frequency applications.
In general, diodes are composed of two dissimilar layers: n-type and p-type semiconductors. Inside the diode, the majority current flow is through the n-type layer, while the minority current preferentially travels through the p-type layer. When the diode is forward-biased, electrons or holes entering the diode move towards the junction of the two layers, allowing a current to flow. Conversely, when the diode is reverse-biased, the electric field close to the junction prevents majority carriers from reaching the junction, leading to a much lower current as compared to when forward-biased.
The S2J-M3/52T has a low forward voltage drop of around 0.8 Volts. This helps to save power and reduce power dissipation for the device. Additionally, its fast switching speed is critical, as when it is used as a switch, it is capable of rapidly switching between the forward-bias state and the reverse-bias state. This offers higher frequencies of operation due to the faster switching time.
This diode is ideal for circuit protection, as it offers both electric current limiting protection and fast switching protection. It helps to ensure that an electric device operates with a proper over-current protection regime, without the restrictions and impairments of other components in the circuit.
The S2J-M3/52T is also a great choice for high frequency switching applications. It is capable of switching currents occurring at high frequencies, and this is important in order to accurately control and manipulate signals.
In sum, the S2J-M3/52T is an ultra-fast-recovery diode ideal for switching power applications. Its low forward voltage and high speed switching capabilities make it an attractive choice for a wide range of medium-current applications such as computers, telecommunications systems, and other applications. Additionally, it is also a great choice for circuit protection, electric current limiting protection and fast switching protection. Lastly, it is ideal for high frequency switching applications, using rapid switching to precisely control signals.
The specific data is subject to PDF, and the above content is for reference
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