S2M-13-F Discrete Semiconductor Products |
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Allicdata Part #: | S2M-FDITR-ND |
Manufacturer Part#: |
S2M-13-F |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE GEN PURP 1KV 1.5A SMB |
More Detail: | Diode Standard 1000V 1.5A Surface Mount SMB |
DataSheet: | S2M-13-F Datasheet/PDF |
Quantity: | 51000 |
3000 +: | $ 0.04158 |
6000 +: | $ 0.03742 |
15000 +: | $ 0.03326 |
30000 +: | $ 0.03119 |
75000 +: | $ 0.02765 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 1.5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Capacitance @ Vr, F: | 20pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | SMB |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | S2M |
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Diodes - Rectifiers - Single
The S2M-13-F is a single rectifier diode that offers a variety of potential applications and useful features. The special construction of this device allows it to handle large currents within acceptable losses and withstand high voltage.
Application Fields
The S2M-13-F is suitable in a host of applications, including AC/DC converters, high end automotive inverters, Uninterruptible Power Supplies (UPSs), and AC adapters and industrial motor drives among other uses. Its high-stability voltage rating of 600 V/600 mA makes it ideal for power converters. Furthermore, it possesses a common cathode configuration and good heat dissipation ability, along with excellent resistance to thermal and mechanical fatigue.
Working Principle
The device utilizes diodes, which are semiconductor devices that act as one-way valves, allowing electrons to flow in one direction and blocking them from flowing in the opposite direction. This is due to the energy differences between n-doped and p-doped semiconductors, whereby free charge carriers are traveling in opposite directions with reverse-biased applied. The diode junction of two dissimilar semiconductors allows the electrons to enter the p-doped side in the forward biased configuration. In the reverse bias configuration however, an electric field blocks the flow of electrons, thereby allowing the flow of electrons to occur only in one direction and producing the unidirectional flow.
The diodes in the S2M-13-F are mounted on a TO-220 insulated metal base for heat dissipation and provide protection against any high-voltage peaks. To ensure a high level of reliability, each diode is encapsulated in a protective silicone gel, which not only safeguards against external influences, but also offers an additional layer of insulation between the anode and the cathode. A glass body also provides insulation between the base and the leads.
Overall, the S2M-13-F enables a powerful and reliable solution for higher power levels with low losses, making it an ideal choice for many different applications. The combination of reliable performance and affordability makes it an invaluable asset for today\'s power electronics industry.
The specific data is subject to PDF, and the above content is for reference
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