S2M-13-F Allicdata Electronics

S2M-13-F Discrete Semiconductor Products

Allicdata Part #:

S2M-FDITR-ND

Manufacturer Part#:

S2M-13-F

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE GEN PURP 1KV 1.5A SMB
More Detail: Diode Standard 1000V 1.5A Surface Mount SMB
DataSheet: S2M-13-F datasheetS2M-13-F Datasheet/PDF
Quantity: 51000
3000 +: $ 0.04158
6000 +: $ 0.03742
15000 +: $ 0.03326
30000 +: $ 0.03119
75000 +: $ 0.02765
Stock 51000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Base Part Number: S2M
Description

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Diodes - Rectifiers - Single

The S2M-13-F is a single rectifier diode that offers a variety of potential applications and useful features. The special construction of this device allows it to handle large currents within acceptable losses and withstand high voltage.

Application Fields

The S2M-13-F is suitable in a host of applications, including AC/DC converters, high end automotive inverters, Uninterruptible Power Supplies (UPSs), and AC adapters and industrial motor drives among other uses. Its high-stability voltage rating of 600 V/600 mA makes it ideal for power converters. Furthermore, it possesses a common cathode configuration and good heat dissipation ability, along with excellent resistance to thermal and mechanical fatigue.

Working Principle

The device utilizes diodes, which are semiconductor devices that act as one-way valves, allowing electrons to flow in one direction and blocking them from flowing in the opposite direction. This is due to the energy differences between n-doped and p-doped semiconductors, whereby free charge carriers are traveling in opposite directions with reverse-biased applied. The diode junction of two dissimilar semiconductors allows the electrons to enter the p-doped side in the forward biased configuration. In the reverse bias configuration however, an electric field blocks the flow of electrons, thereby allowing the flow of electrons to occur only in one direction and producing the unidirectional flow.

The diodes in the S2M-13-F are mounted on a TO-220 insulated metal base for heat dissipation and provide protection against any high-voltage peaks. To ensure a high level of reliability, each diode is encapsulated in a protective silicone gel, which not only safeguards against external influences, but also offers an additional layer of insulation between the anode and the cathode. A glass body also provides insulation between the base and the leads.

Overall, the S2M-13-F enables a powerful and reliable solution for higher power levels with low losses, making it an ideal choice for many different applications. The combination of reliable performance and affordability makes it an invaluable asset for today\'s power electronics industry.

The specific data is subject to PDF, and the above content is for reference

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