S2M-E3/52T Allicdata Electronics

S2M-E3/52T Discrete Semiconductor Products

Allicdata Part #:

S2M-E3/52TGITR-ND

Manufacturer Part#:

S2M-E3/52T

Price: $ 0.09
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 1KV 1.5A DO214
More Detail: Diode Standard 1000V 1.5A Surface Mount DO-214AA (...
DataSheet: S2M-E3/52T datasheetS2M-E3/52T Datasheet/PDF
Quantity: 3750
750 +: $ 0.08196
1500 +: $ 0.06284
2250 +: $ 0.05464
5250 +: $ 0.04918
18750 +: $ 0.04371
37500 +: $ 0.04098
75000 +: $ 0.03643
Stock 3750Can Ship Immediately
$ 0.09
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: S2M
Description

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Background

The S2M-E3/52T is a single step rectifier diode, which is specially designed for applications featuring up to 3.2A forward current and a reverse voltage of up to 52V. S2M-E3/52T makes use of robust construction and design to offer unparalleled performance in a wide range of applications. It is compliant with the RoHS and IEC standards of environmental protection and safety.

Application Field

Due to its compact size and light weight, S2M-E3/52T mainly used in various SMD power applications such as TVs, PCs, vehicles and mobile devices. S2M-E3/52T can be used for lighting, output rectification, switching, inverting, voltage regulation and motor driving. Besides, it is ideal for use as a rectifier in high-frequency power supplies and inverters, as well as for DC-DC converters and energizing applications.

Working Principle

S2M-E3/52T works on the principle of the PN-junction. The device utilizes a metal and silicon dioxide or SiO₂ layer as a semiconductor. The metal provides the electrical contact while the SiO₂ controls the electrical properties. The device will allow the current to flow on one direction due to the presence of two junction barriers; it also provides high-speed switching and an isolation voltage.

When the electrical current enters the anode side, it will pass through the junction barriers and is transferred to the cathode side. The electrical properties of the SiO₂ will ensure that the current will not flow on the opposite direction. The electrical contact on both ends provides excellent low impedance and allows the current to flow without any hindrance. This also ensures that the device can withstand sudden surges and transients.

Conclusion

The S2M-E3/52T is an ideal device for use in applications requiring up to 3.2A forward current and a reverse voltage of up to 52V. Its robust construction, high-speed switching capabilities and protection from short-circuit or overload make the device perfect for a wide range of applications. This device is fully compliant with the RoHS and IEC standards of environmental protection and safety.

The specific data is subject to PDF, and the above content is for reference

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