S2M-E3/52T Discrete Semiconductor Products |
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Allicdata Part #: | S2M-E3/52TGITR-ND |
Manufacturer Part#: |
S2M-E3/52T |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1KV 1.5A DO214 |
More Detail: | Diode Standard 1000V 1.5A Surface Mount DO-214AA (... |
DataSheet: | S2M-E3/52T Datasheet/PDF |
Quantity: | 3750 |
750 +: | $ 0.08196 |
1500 +: | $ 0.06284 |
2250 +: | $ 0.05464 |
5250 +: | $ 0.04918 |
18750 +: | $ 0.04371 |
37500 +: | $ 0.04098 |
75000 +: | $ 0.03643 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 1.5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2µs |
Current - Reverse Leakage @ Vr: | 1µA @ 1000V |
Capacitance @ Vr, F: | 16pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | S2M |
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Background
The S2M-E3/52T is a single step rectifier diode, which is specially designed for applications featuring up to 3.2A forward current and a reverse voltage of up to 52V. S2M-E3/52T makes use of robust construction and design to offer unparalleled performance in a wide range of applications. It is compliant with the RoHS and IEC standards of environmental protection and safety.
Application Field
Due to its compact size and light weight, S2M-E3/52T mainly used in various SMD power applications such as TVs, PCs, vehicles and mobile devices. S2M-E3/52T can be used for lighting, output rectification, switching, inverting, voltage regulation and motor driving. Besides, it is ideal for use as a rectifier in high-frequency power supplies and inverters, as well as for DC-DC converters and energizing applications.
Working Principle
S2M-E3/52T works on the principle of the PN-junction. The device utilizes a metal and silicon dioxide or SiO₂ layer as a semiconductor. The metal provides the electrical contact while the SiO₂ controls the electrical properties. The device will allow the current to flow on one direction due to the presence of two junction barriers; it also provides high-speed switching and an isolation voltage.
When the electrical current enters the anode side, it will pass through the junction barriers and is transferred to the cathode side. The electrical properties of the SiO₂ will ensure that the current will not flow on the opposite direction. The electrical contact on both ends provides excellent low impedance and allows the current to flow without any hindrance. This also ensures that the device can withstand sudden surges and transients.
Conclusion
The S2M-E3/52T is an ideal device for use in applications requiring up to 3.2A forward current and a reverse voltage of up to 52V. Its robust construction, high-speed switching capabilities and protection from short-circuit or overload make the device perfect for a wide range of applications. This device is fully compliant with the RoHS and IEC standards of environmental protection and safety.
The specific data is subject to PDF, and the above content is for reference
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