Allicdata Part #: | S3A-E3/9AT-ND |
Manufacturer Part#: |
S3A-E3/9AT |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 50V 3A DO214AB |
More Detail: | Diode Standard 50V 3A Surface Mount DO-214AB (SMC) |
DataSheet: | S3A-E3/9AT Datasheet/PDF |
Quantity: | 1000 |
3500 +: | $ 0.08317 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 2.5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2.5µs |
Current - Reverse Leakage @ Vr: | 10µA @ 50V |
Capacitance @ Vr, F: | 60pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | S3A |
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Diodes are essential components in any electronic circuit, and their categorization, selection and application are of utmost importance. Of the various types, the S3A-E3/9AT diode is worth a closer look. This single diode is designed for superior performance in the field of rectification, and its structure and working principle add to its efficiency and reliability.
The S3A-E3/9AT diode is almost always connected in a reverse bias, and its structure facilitates an enhanced performance even in reverse bias conditions. It has a characteristic U-shaped semiconducting material between an anode and a cathode. The semiconductor material is composed of atom-sized particles of impure silicon, diced into the U-shape, and it is held in between two wires. There is a junction at the edge of each wire, and these junctions act as a barrier that restricts the flow of electrons.
When the forward bias is applied to the diode, the positively charged particles of theSilicon atoms are repelled away from the cathode and move towards the anode. This, in turn, produces a repulsion effect on the electrons, resulting in an electric current. On the other hand, when a reverse bias is applied, the current remains negligible due to the diffusion of electrons and holes. This diffusion occurs through spill-over effect, a phenomenon that results in a buildup of electrons that accelerates and circumvents the normal working principle of an impure silicon diode.
The S3A-E3/9AT diode boasts of a highefficiency and reliability because of its capacity to withstand reverse biases. Moreover, it is capable of producing a large current when forward bias is applied and the build-up of electrons is reduced. This increases the life of the diode, thereby making it an ideal choice in rectification. Its use in the field of power control is particularly beneficial as it is able to theoretically prevent voltage/current surges created by varying loads, and help regulate power supply fluctuations. Similarly, its increased current-carrying ability makes it a suitable choice for use in rectification circuits.
All in all, the S3A-E3/9AT diode is a truly remarkable tool for those working in the field of power control and rectification. With its unique combination of improved efficiency and reliability, it is capable of delivering excellent results in the most challenging projects. Understanding its structure and working principle is also necessary in order to be able to properly utilize its potential.
The specific data is subject to PDF, and the above content is for reference
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