Allicdata Part #: | S3J-E3/9ATGITR-ND |
Manufacturer Part#: |
S3J-E3/9AT |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 3A DO214AB |
More Detail: | Diode Standard 600V 3A Surface Mount DO-214AB (SMC... |
DataSheet: | S3J-E3/9AT Datasheet/PDF |
Quantity: | 1000 |
3500 +: | $ 0.09421 |
7000 +: | $ 0.08917 |
10500 +: | $ 0.08413 |
24500 +: | $ 0.07825 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 2.5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2.5µs |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | 60pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | S3J |
Description
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Introduction
The S3J-E3/9AT diode is a single rectifier commonly used in a variety of applications. It is a high-speed and high-efficiency diode featuring a wide operating temperature range and low reverse leakage current. The diode is built using Schottky Barrier Technology, which offers superior performance compared to other rectifier diodes. The reverse voltage breakdown and surge capability is excellent, and the package size is small compared to other rectifier diodes.Features and Benefits
The main features and benefits of the S3J-E3/9AT diode include:- High-speed and high-efficiency switching
- Very low reverse leakage current
- High peak forward current capability
- High voltage breakdown and surge capability
- Excellent temperature performance
- Wide operating temperature range
- Small package size
Application Field and Working Principle
The S3J-E3/9AT diode is used in a variety of applications including automotive, motor control, telecom, instrumentation and industrial control. It is an ideal choice for high-frequency and high-efficiency power supply applications.The S3J-E3/9AT diode is a single rectifier which exploits the Schottky barrier principle. The diode is composed of a highly doped Schottky barrier formed by a thin layer of metal on a highly doped p-type semiconductor. When the diode is forward biased, the barrier between the metal and the semiconductor breaks down and a current flows between them. This process creates a rectified signal and also limits the reverse current.Conclusion
The S3J-E3/9AT diode is one of the most popular and reliable rectifier diodes available. Its high-speed and high-efficiency switching is perfect for a variety of applications including automotive, motor control, telecom, instrumentation and industrial control. The diode is also characterized by very low reverse leakage current, high peak forward current capability, high voltage breakdown, excellent temperature performance and a wide operating temperature range. The small package size makes it an ideal choice for high-frequency and high-efficiency power supply applications.The specific data is subject to PDF, and the above content is for reference
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