Allicdata Part #: | S3J-M3/57T-ND |
Manufacturer Part#: |
S3J-M3/57T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GPP 3A 600V DO-214AB |
More Detail: | Diode Standard 600V 3A Surface Mount DO-214AB (SMC... |
DataSheet: | S3J-M3/57T Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 2.5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2.5µs |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | 60pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The S3J-M3/57T is a single, robust and ultra-fast rectifier diode designed specifically for use by the telecom industry in applications such as telecom repeaters, global system for mobile communications (GSM) cellular base stations, and power supplies. As the rectifier diode handles large peak current and voltage, it is important to have a device with excellent thermal properties.
When compared to other rectifying devices, the S3J-M3/57T exhibits superior thermal characteristics due to the use of a special alloy base. The thermal resistance of this diode measures in at 0.01 degrees Celsius/Watts and an operating temperature range of -40°C to +125°C can be achieved. Additionally, this diode is able to withstand an operating voltage ranging from 200V to 500V and a non-repetitive surge current of 5A.
The S3J-M3/57T is also capable of switching at speeds up to 2000V/us, which is superior to other rectifier diodes. It implements a reverse recovery time of 20ns, thus ensuring faster rectification. As such, this rectifier diode is suitable for use in a wide range of projects ranging from automotive and medical equipment, to wireless communication and power conversion.
The working principle of the S3J-M3/57T is quite simple. When a forward voltage is applied to the diode, the N-type and P-type materials form a barrier that prevents current from entering in reverse direction. This barrier results from the depletion of carriers in the P-type material. Once the forward voltage is removed, the depletion layer will dissipate, allowing the build-up of carriers in the P-type material, and thus allowing the reverse current to flow.
In addition, this diode exhibits excellent thermal conductivity, enabling it to be used at high temperatures with minimal power wastage caused by heat. This diode’s robust design makes it ideal for a range of different environments that require ultra-fast rectification. The S3J-M3/57T is available in a surface-mount package, making it easier to integrate into projects as part of a larger components system.
In summary, the S3J-M3/57T is an ideal diode for applications where fast and reliable rectification is required such as in wireless communication and power conversion. Its robust design, excellent thermal performance and fast switching speeds make it suitable for use in a variety of environments. Furthermore, its surface-mount package reduces the complexity and difficulty of incorporating the diode into workspaces.
The specific data is subject to PDF, and the above content is for reference
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