S5G-E3/57T

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	400V
Current - Average Rectified (Io):	5A
Voltage - Forward (Vf) (Max) @ If:	1.15V @ 5A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):	2.5µs
Current - Reverse Leakage @ Vr:	10µA @ 400V
Capacitance @ Vr, F:	40pF @ 4V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	DO-214AB, SMC
Supplier Device Package:	DO-214AB (SMC)
Operating Temperature - Junction:	-55°C ~ 150°C
Base Part Number:	S5G

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S5G-E3/57T application field and working principleS5G-E3/57T is a single rectifier diode designed for use in a wide range of applications. It has a high current rating of up to 3.5A and a low forward voltage drop of less than 0.5V. This low forward voltage drop makes it suitable for use in applications requiring low power consumption. The diode is capable of withstanding high surge currents and can be used in AC/DC converters, ultra-high frequency inverters, power supplies, and other applications.The S5G-E3/57T is based on a silicon p-n junction diode(PNJ). When a diode is forward-biased, the bias voltage causes electrons to move from the N-type region (negative) to the P-type region (positive) and produces a large enough potential to cause current to flow between two points. In forward bias, electron current will flow to the P-type region and holes (electricallypositive charged particles) to the N-type region, resulting in the formation of a low resistance path between two terminals, allowing the current to flow easily. The maximum avalanche or reverse breakdown voltage of S5G-E3/57T diodes varies from 600V to 1000V. In a reverse bias, when the junction voltage exceeds the breakdown voltage, a large number of electrons and holes are generated due to heavily ionized impurities which have been deliberately introduced into the junction for this purpose. This process is commonly known as avalanche breakdown, and results in a large increase in electric current, which can damage the diode if the current is too large. The S5G-E3/57T is highly doped with gallium arsenide and gallium phosphide to allow high linearity and reliability - it is able to dissipate up to 3 Watts of power when used in a linear mode while maintaining a low forward voltage drop. In addition, it can be used with a wide input voltage range, allowing it to be used in AC/DC converters, rectifiers, and other applications. The diode is also able to withstand high transient currents, making it suitable for use in applications requiring fast switching and high frequency inverse polarity protection.The S5G-E3/57T is also suitable for power supply applications due to its small size and large current rating. It is commonly used as a rectifier in battery-powered devices such as cell phones, laptop computers, and portable digital cameras. The diode is also well suited for a range of other applications, including buck and boost converters, DC-DC converters, power factor correction circuits, and more.The S5G-E3/57T is widely available and easy to install. It comes in a small SMA package, making it suitable for use in space-constrained applications. Additionally, its high breakdown voltage ensures reliable operation in harsh environments.In summary, the S5G-E3/57T is a single rectifier diode designed for use in a wide range of applications. It has a high current rating of up to 3.5A and a low forward voltage drop of less than 0.5V. It can be used with a wide input voltage range and can withstand high transient currents. Furthermore, its small size and large current rating make it suitable for use in power supply applications.

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