Allicdata Part #: | S5J-E3/57TGITR-ND |
Manufacturer Part#: |
S5J-E3/57T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 5A DO214AB |
More Detail: | Diode Standard 600V 5A Surface Mount DO-214AB (SMC... |
DataSheet: | S5J-E3/57T Datasheet/PDF |
Quantity: | 4250 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2.5µs |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | 40pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | S5J |
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S5J-E3/57T Application Field and Working Principle
S5J-E3/57T is a single rectifier diode developed by ROHM. It is suitable for commercial electronic applications and consumer electronic applications, such as electronic circuit protection, high-speed rectification, reverse battery protection, protection of communication power supplies and ETC (Electronic Toll Collect) security applications.
Description
The S5J-E3/57T is an ultra-low-profile device with a total height of 0.6 mm. The power dissipation is 1.2 W and the forward voltage is 6.1 V. It has an operating temperature range of -40℃ to +125℃. The S5J-E3/57T also has leakage current less than 5 μA for reverse voltage of 55 V. The operating junction and storage temperature ranges are from -55℃ to +150℃.
Application Field
The S5J-E3/57T is a single diode and can be used in any type of circuit requiring rectification. It is often used in electronic circuits to prevent reverse DC current, protect circuit elements, and reduce power consumption. It can also be used in consumer electronic applications such as LCD TVs, set-top boxes, routers, and hard drives. It is also used in communication power supplies and ETC (Electronic Toll Collect) security applications.
Working Principle
The S5J-E3/57T is a uni-directional device, meaning it only allows electricity to flow in one direction. When forward biased, the device allows current to flow from anode to cathode. When reverse biased, the device prevents electrical current from flowing from cathode to anode.
The S5J-E3/57T employs a silicon substrate material to conduct current and a Schottky barrier diode to make it possible for current to flow in a single direction. The device operates by creating a potential barrier, or a barrier voltage, between the two semiconductor materials. This barrier is referred to as the Schottky barrier.
When a forward voltage is applied to the S5J-E3/57T, the Schottky barrier is reduced and current is allowed to flow. Conversely, when a reverse voltage is applied across the diode, the Schottky barrier increases and current is blocked. This allows the S5J-E3/57T to perform its rectification functions.
Conclusion
The S5J-E3/57T is a single rectifier diode developed by ROHM. It is suitable for commercial electronic applications and consumer electronic applications, such as electronic circuit protection, high-speed rectification, reverse battery protection, protection of communication power supplies and ETC (Electronic Toll Collect) security applications. It operates by forming a Schottky barrier between two semiconductor materials and reduces this barrier to allow electrical current to flow in one direction.
The specific data is subject to PDF, and the above content is for reference
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