Allicdata Part #: | S72VS256RE0AHBJ13-ND |
Manufacturer Part#: |
S72VS256RE0AHBJ13 |
Price: | $ 4.16 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH RAM 256MIT PARALLEL |
More Detail: | FLASH, DRAM Memory IC 256Mbit Flash, 2565Mbit DDR ... |
DataSheet: | S72VS256RE0AHBJ13 Datasheet/PDF |
Quantity: | 1000 |
2200 +: | $ 3.78189 |
Series: | VS-R |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH, RAM |
Technology: | FLASH, DRAM |
Memory Size: | 256Mbit Flash, 2565Mbit DDR DRAM |
Clock Frequency: | 108MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Operating Temperature: | -25°C ~ 85°C (TA) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
S72VS256RE0AHBJ13 application field and working principle
The S72VS256RE0AHBJ13 memory is a non-volatile memory device that can store 256 megabits of information when power is initially supplied. It is mainly used in mobile devices handsets, digital cameras and a variety of data storage applications, such as personal computers and digital information kiosks. As an embedded memory, the S72VS256RE0AHBJ13 is designed to meet strict size, power and temperature extremity limits, making it a challenging product to design and manufacture.
Application Fields
The application fields of the S72VS256RE0AHBJ13 range from storage capacities for mobile handsets and digital cameras to data storage applications, such as personal computers and digital information kiosks. The S72VS256RE0AHBJ13 can also be used to store user data and programs in a variety of control systems and automotive applications.
Working Principle
The S72VS256RE0AHBJ13 is a non-volatile memory device, so it can retain data even when power is lost. It is manufactured using advanced CMOS technology and its contents are protected against accidental pattern disruption or data loss due to ageing, vibration or inadvertent programming. This memory was designed to operate with a power voltage of 3.3V. Its features include high speed and low power. Its write speed is 25ns max and its read speed is 5nS max.
It also has low power dissipation with a typical standby current of 0.8μA and a typical active current of 57mA. In addition, it has a fast write cycle and a high write endurance, making it a suitable choice for data storage applications. To write data, a write cycle is triggered by applying a write enable signal which sets a bit in the current address location to the desired value. The read cycle is triggered by applying the read signal which causes the device to output the data present at the current address.
Conclusion
In conclusion, the S72VS256RE0AHBJ13 is a non-volatile memory device that is used in a variety of embedded applications such as mobile handsets and digital cameras. It has low power consumption, a fast write cycle and a high write endurance. It is designed to operate with a power voltage of 3.3V and its features include high speed and low power. This makes it a suitable choice for storage and data storage applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
S72VS256RE0AHBH13 | Cypress Semi... | 4.16 $ | 1000 | IC FLASH RAM 256MIT PARAL... |
S72VS256RE0AHBJ13 | Cypress Semi... | 4.16 $ | 1000 | IC FLASH RAM 256MIT PARAL... |
S72VS256RE0AHBH10 | Cypress Semi... | 4.7 $ | 1000 | IC FLASH RAM 256MIT PARAL... |
S72VS256RE0AHBJ10 | Cypress Semi... | 4.7 $ | 1000 | IC FLASH RAM 256MIT PARAL... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
LPDDR3 6G DIE 192MX32Memory IC
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...