S72VS256RE0AHBJ13 Allicdata Electronics
Allicdata Part #:

S72VS256RE0AHBJ13-ND

Manufacturer Part#:

S72VS256RE0AHBJ13

Price: $ 4.16
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH RAM 256MIT PARALLEL
More Detail: FLASH, DRAM Memory IC 256Mbit Flash, 2565Mbit DDR ...
DataSheet: S72VS256RE0AHBJ13 datasheetS72VS256RE0AHBJ13 Datasheet/PDF
Quantity: 1000
2200 +: $ 3.78189
Stock 1000Can Ship Immediately
$ 4.16
Specifications
Series: VS-R
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH, RAM
Technology: FLASH, DRAM
Memory Size: 256Mbit Flash, 2565Mbit DDR DRAM
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TA)
Description

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S72VS256RE0AHBJ13 application field and working principle

The S72VS256RE0AHBJ13 memory is a non-volatile memory device that can store 256 megabits of information when power is initially supplied. It is mainly used in mobile devices handsets, digital cameras and a variety of data storage applications, such as personal computers and digital information kiosks. As an embedded memory, the S72VS256RE0AHBJ13 is designed to meet strict size, power and temperature extremity limits, making it a challenging product to design and manufacture.

Application Fields

The application fields of the S72VS256RE0AHBJ13 range from storage capacities for mobile handsets and digital cameras to data storage applications, such as personal computers and digital information kiosks. The S72VS256RE0AHBJ13 can also be used to store user data and programs in a variety of control systems and automotive applications.

Working Principle

The S72VS256RE0AHBJ13 is a non-volatile memory device, so it can retain data even when power is lost. It is manufactured using advanced CMOS technology and its contents are protected against accidental pattern disruption or data loss due to ageing, vibration or inadvertent programming. This memory was designed to operate with a power voltage of 3.3V. Its features include high speed and low power. Its write speed is 25ns max and its read speed is 5nS max.

It also has low power dissipation with a typical standby current of 0.8μA and a typical active current of 57mA. In addition, it has a fast write cycle and a high write endurance, making it a suitable choice for data storage applications. To write data, a write cycle is triggered by applying a write enable signal which sets a bit in the current address location to the desired value. The read cycle is triggered by applying the read signal which causes the device to output the data present at the current address.

Conclusion

In conclusion, the S72VS256RE0AHBJ13 is a non-volatile memory device that is used in a variety of embedded applications such as mobile handsets and digital cameras. It has low power consumption, a fast write cycle and a high write endurance. It is designed to operate with a power voltage of 3.3V and its features include high speed and low power. This makes it a suitable choice for storage and data storage applications.

The specific data is subject to PDF, and the above content is for reference

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