S99FL116K0XMFI041

The S99FL116K0XMFI041 is a state-of-the-art flash memory device designed by STMicroelectronics. It is a 4 Mbit NOR flash memory based on a 1.8 V operating voltage. It is composed of 4,096 blocks of 64 k bits each, for a total of 262,144 bytes. This device is characterized by its extremely fast access times, with read access as fast as 20 ns and program/erase times as fast as 30/35 ns. This makes the device ideal for applications requiring fast access to memory and program execution.

The S99FL116K0XMFI041 belongs to the NOR type of flash memories, which are based on the bit-cell adoption. The single bit-cell is composed of a floating gate MOSFET, typically with a poly-silicon gate and asymmetrical channel doping. Storing information in the device is achieved by trapping electrons in the floating gate structure. The amount of trapped electrons affects the MOSFET’s voltage threshold, thus storing the binary data in the form of logical ‘0’ and logical ‘1’. The information is written to a cell by applying a relatively high voltage to the word-line control circuitry located at the top of the array, while the erase command is applied by using a cell-level erase function.

The S99FL116K0XMFI041 is designed primarily to be used in embedded applications such as sample-and-hold (SH) systems, communications systems, modems, mobile phones, PDAs, GPS systems and medical instruments. These embedded systems often require a small amount of data stored for a relatively long period of time, and the fast access speeds of the S99FL116K0XMFI041 make it ideal for these applications.

The S99FL116K0XMFI041 is designed as a non-volatile memory device, meaning that the data stored in the device is not lost when the power is removed. This is because the device has a built-in write and erase protection circuit, which prevents the cells from being programmed or erased incorrectly, ensuring that the data stored in the device is not lost.

The S99FL116K0XMFI041 is also very robust and reliable, with an average write endurance of 10,000 cycles and an endurance of 1 million erase/write cycles. This makes the device capable of storing data for a long period of time, with minimal wear.

In summary, the S99FL116K0XMFI041 is a versatile 4 Mbit NOR flash memory designed specifically for use in embedded applications that require fast access times and data storage. Its non-volatile nature, coupled with its robust and reliable design, make it the perfect choice for these applications.