S99FL256SDSMFBG03

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The S99FL256SDSMFBG03 memory is an advanced technology memory chip developed for various industrial applications. This memory chip is a 4-bit CMOS Non-volatile Memory with Double Data Rate (DDR) technology, providing an ideal solution for space-constrained and low-power space mission designs. This memory chip is designed for use in power and space-constrained environments and provides superior read, write, and erase performance compared to traditional memory technologies.

The S99FL256SDSMFBG03 memory chip has a data retention of 35 years, with a write endurance of 40 years. It is capable of executing 1,024 address cycles and offers a high-speed write time of 4 microseconds. The memory chip offers a total capacity of 32GB, with a program-erase block size of 512 bytes. The device also supports accelerated wear-leveling, which eliminates the need for frequent erasures.

The S99FL256SDSMFBG03 memory chip operates at operating voltage ranging from 2.5V to 3.6V. It utilizes the ONFI interface protocol and is designed to meet the requirements of mission-critical applications. The device has a core temperature range of -40 to 85 degrees Celsius with a maximum clock speed of 200 MHz, making it suitable for operation in space and other extreme environments.

The S99FL256SDSMFBG03 memory chip has a variety of applications, including storage and file systems, power-failure protection, and embedded systems. In storage systems, the device can store large amounts of data, allowing for quick access and control. In power-failure protection applications, the device protects against the loss of data in the event of a power outage. This can be beneficial in mission-critical applications that require high reliability. In embedded systems, the S99FL256SDSMFBG03 can provide the necessary components to interface with other subsystems, allowing for seamless integration.

The working principle of the S99FL256SDSMFBG03 memory chip is based on the same principles as traditional memory chips. It stores data in bits, with each bit having a unique address. When a write operation is requested, the memory chip modifies the bits as needed and then sets the status bits for the updated data. The read operation works similarly by requesting the data from the memory address, and the chip retrieves the bits associated with that address. The erase operation is designed to reset the bits in the memory address, clearing them for reuse.

In summary, the S99FL256SDSMFBG03 memory chip is an advanced technology memory chip designed for mission-critical applications. It has a wide variety of applications and offers a data retention and write endurance of 35 and 40 years, respectively. The chip operates at a voltage of 2.5V to 3.6V and utilizes the ONFI interface protocol. With its superior write time, fast read time, and increased capacity, the S99FL256SDSMFBG03 memory chip is the ideal solution for space and mission-critical designs.

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