SBC847AWT1G Discrete Semiconductor Products |
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Allicdata Part #: | SBC847AWT1GOSTR-ND |
Manufacturer Part#: |
SBC847AWT1G |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 45V 0.1A SOT-323 |
More Detail: | Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 150m... |
DataSheet: | SBC847AWT1G Datasheet/PDF |
Quantity: | 24000 |
3000 +: | $ 0.01822 |
6000 +: | $ 0.01643 |
15000 +: | $ 0.01429 |
30000 +: | $ 0.01286 |
75000 +: | $ 0.01143 |
150000 +: | $ 0.00953 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 110 @ 2mA, 5V |
Power - Max: | 150mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70-3 (SOT323) |
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SBC847AWT1G is a high-performance NPN Silicon epitaxial planar small-signal transistor available in the surface mount SOT-23 package. It is designed for general-purpose small-signal amplification and switching applications in the high-frequency and low-frequency applications. It is used in wide range of industries such as automotive, computer, and telecommunication. In terms of performance, the SBC847AWT1G provides an excellenthroll-off characteristics, low saturation voltage and low leakage current.The SBC847AWT1G belongs to a family of transistors known as Bipolar Junction Transistors (BJTs). A BJT is a type of active electronic component that combines three terminal connections with a small ceramic or metallic crystal. It uses the flow of electrons and holes between p-type and n-type materials to create a current controllable medium. The three terminals are commonly referred to as the base, collector, and emitter. The SBC847AWT1G is a single type of BJT; specifically, a single NPN junction materials. In operation, current flows from the collector to the emitter (in the form of electrons). The base terminal is connected to the "middle" of the transistor and acts as a control element. The voltage at the base terminal is used to control the amount of current flow from the collector to the emitter. By controlling the current flow, the output voltage at the emitter can be regulated. As with all BJTs, the SBC847AWT1G can be used in a variety of applications, such as audio and video signal amplifiers, logic elements, oscillators, and smaal signal circuitry. In addition, the SBC847AWT1G can be used in low power applications where low cost, low noise features are desired.In terms of its working principle, the SBC847AWT1G relies on the action of electric current within a BJT device. When a small voltage is applied to the base terminal, an electric current flows from the collector to the emitter. This current is then amplified by the transistor, creating an output signal. The output voltage and current amplitude of the SBC847AWT1G is determined by the current at the base terminal. A larger base current results in a larger output voltage and current, while a smaller base current results in a smaller output voltage and current. In conclusion, the SBC847AWT1G is a single NPN junction transistor widely used in automotive, computer, and telecommunication applications. It has excellent roll-off characteristics, low saturation voltage, and low leakage current. Its working principle relies on the current flow at the base terminal to determine the output current and voltage of the device.
The specific data is subject to PDF, and the above content is for reference
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