
Allicdata Part #: | SD100-12-22-021-ND |
Manufacturer Part#: |
SD100-12-22-021 |
Price: | $ 36.90 |
Product Category: | Sensors, Transducers |
Manufacturer: | Luna Optoelectronics |
Short Description: | PHOTODIODE BLUE ENH 2.5MM TO-5 |
More Detail: | Photodiode 660nm 13ns 82° |
DataSheet: | ![]() |
Quantity: | 94 |
1 +: | $ 33.54750 |
10 +: | $ 28.56100 |
25 +: | $ 25.80810 |
100 +: | $ 24.51760 |
250 +: | $ 22.88310 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Wavelength: | 660nm |
Color - Enhanced: | Blue |
Spectral Range: | 350nm ~ 1100nm |
Diode Type: | PIN |
Responsivity @ nm: | 0.28 A/W @ 450nm |
Response Time: | 13ns |
Voltage - DC Reverse (Vr) (Max): | 75V |
Current - Dark (Typ): | 1.6nA |
Active Area: | 5.067mm² |
Viewing Angle: | 82° |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Through Hole |
Package / Case: | -- |
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Optical sensors are heavily utilized in many industrial and consumer applications as they can make measurements using light energy. Photodiodes, a type of optical sensor, are responsible for converting photons into electrical signals. The SD100‐12‐22‐021 is one of the most widely used photodiodes, so exploring its application field and operating principle is essential for those working on optical sensing.
The SD100‐12‐22‐021 photodiode is composed of a chip of n‐Si region, which is highly sensitive to light. In terms of its application field, it is most commonly utilized in measuring light energy in a variety of mediums, particularly in the visible light range. Its uses include light sensing in medical devices, lighting control systems, and industrial automation. This photodiode is also capable of detecting small levels of optical radiation, being able to accurately measure through common materials including glass, cloth, and paper. This allows it to be used for sensing in areas involving counterfeit detection, bar code recognition, and home security.
Moving on to the operational principle of this sensitive photodiode, it is comprised of a Schottky diode with an internal resistance of about 1‐4 ohms in order to generate a current in response to incident light energy. When photons are absorbed by the silicon chip, electrons become excited and move in the conduction band creating a current. This is then amplified by the internal resistance and can be measured out of the diode.
The internal construction of the photodiode also contains a reversely biased gate, which allows the diode to be made of n-type silicon specifically. Since the majority charge carriers are negative, the diode can sustain a negative charge at the gate, thus taking advantage of its high electrical resistance and making it air-tight.
Beyond this, the SD100‐12‐22‐021 photodiode also comes with exceptional electrical specifications in terms of peak sensitivity, typical dark current, and various spectral response. These technical details also play an important role in determining its suitability for particular applications. For example, its peak sensitivity is within the range of 320nm‐750nm, which influences its peak ability to detect visible light distributions. Additionally, its typical dark current is only 0.1nA at reverse voltage of 5V, which is suitable for reliable functioning in lighting control systems. Finally, its spectral response is in the range of 320‐850nm, meaning that it can detect faint optical radiation from sources in this wavelength.
In conclusion, the SD100‐12‐22‐021 photodiode is an extremely sensitive optical sensor with applications ranging from medical equipment measuring to counterfeit detection. Its operational principle is based on its internal construction with a Schottky diode and reverse biased gate. In addition, its electrical specifications give insight into its appropriateness for particular applications, such as its peak sensitivity and typical dark current. Going forward, this photodiode can be implemented in diverse industries under a variety of circumstances, ensuring reliable light sensing.
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