SD103A-TAP Allicdata Electronics
Allicdata Part #:

SD103A-TAPGITB-ND

Manufacturer Part#:

SD103A-TAP

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 40V SGL DO35
More Detail: Diode Schottky 40V 200mA Through Hole DO-35
DataSheet: SD103A-TAP datasheetSD103A-TAP Datasheet/PDF
Quantity: 1000
1 +: $ 0.03000
10 +: $ 0.02910
100 +: $ 0.02850
1000 +: $ 0.02790
10000 +: $ 0.02700
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Box (TB) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 10ns
Current - Reverse Leakage @ Vr: 5µA @ 30V
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 125°C (Max)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SD103A-TAP is a type of diode rectifier that is designed as a single component. It’s designed for many types of semiconductor applications. SD103A-TAP rectifier diodes are fabricated using both thin-film and thick-film technologies. These diodes are specifically designed to provide great performance in power electronic design applications. The Thin-film Assisted Performance (TAP) diodes offer exceptional flexibility and performance in a variety of low power and high frequency power conversion applications.

SD103A-TAP diodes use the thin-film technology to reduce the power dissipation and to increase the performance of the rectifier. The diodes are formed by depositing three thin layers onto a silicon wafer substrate. The two metal layers are separated by a thin semiconductor layer, which acts as a self-regulating barrier. The rectifier includes a P-N junction at the metal interface and a metal-oxide-semiconductor (MOS) capacitor at the anode. The rectifier also includes an integrated termination and a protective coating to protect it from external contamination.

SD103A-TAP rectifier diodes are mostly used in power electronic applications, such as high-frequency switching power converters, dc-dc power converters, power transmitters, and wireless power transfer networks. The diodes can also be used in home automation, automotive, and medical instrumentation. They also offer excellent power dissipation and temperature performance for low power applications as well as high-voltage applications. The thin-film technology of the rectifier enables it to operate at higher current densities without causing excessive heat in the application.

SD103A-TAP rectifier diodes operate on the principle of forward conduction. The regulating layer within the diode controls the forward current and the reverse current. The reverse conduction is also controlled by the same layer. The current flows through the P-N junction until it reaches the anode which is connected to the MOS capacitor. The capacitor is connected to ground and is responsible for absorbing any transient voltages.

In low power applications, the SD103A-TAP rectifier diodes are ideal for use with low voltages and fast switching times. The thin-film technology also allows them to be used in high power applications such as motor control and power conversion. In these applications, the diodes can handle large currents and high voltages without any problems. The operating temperature of the diode also remains low due to its thin film construction.

SD103A-TAP rectifier diodes are an ideal choice for a wide range of power electronic applications. The thin-film technology offers superior performance in both low power and high power applications. The diodes also provide good protection against voltage and current transients, making them suitable for use in harsh environments. The thin-film construction ensures good temperature performance and longer life for the diode.

The specific data is subject to PDF, and the above content is for reference

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