SD1013-20H

The SD1013-20H is a bipolar radio-frequency (RF) transistor. It is a NPN device with a maximum power rating of 350 mW, which operates in the frequency range of 4 to 5 GHz. It has a collector-emitter voltage rating of 30 V and a collector-base voltage rating of 30 V. The maximum collector current rating is 17.5 mA.The SD1013-20H is used in a wide range of applications including broadcasting, radar, aviation communications, mobile communications and aerospace. It is used to amplify a weak signal from the antenna and increase the signal strength of the incoming signal. In addition, it can be used as an oscillator for transmitting signals, as well as a linear amplifier for transmitting power.The main components of the SD1013-20H are a Collector, an Emitter and a Base. The Collector is responsible for collecting the current flowing in the circuit. The Emitter is responsible for setting the base current via the forward bias generated by the Base. The Base is responsible for the current gain of the transistor.The working principle of the SD1013-20H is based on the concentration of electrons and holes. In this device, when electrons enter the base region, they produce a forward bias on the base-collector junction, which results in an increase in current. As a result, the current between the collector and emitter increases. This increased current produces a voltage across the collector and emitter, which produces the amplified signal.The SD1013-20H is a very useful device, as it can be used for a variety of applications. With its wide frequency range and high power rating, it can be used for a multitude of applications. Its excellent noise suppression performance makes it an ideal choice for many applications.